參數(shù)資料
型號(hào): V54C3256164VB
廠商: Mosel Vitelic, Corp.
英文描述: 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
中文描述: 片256Mbit SDRAM的3.3伏,第二的TSOP /系統(tǒng)芯片的BGA / WBGA包裝16米x 16,32 × 8,64米× 4
文件頁(yè)數(shù): 22/52頁(yè)
文件大小: 853K
代理商: V54C3256164VB
22
V54C3256(16/80/40)4V(T/S/B) Rev. 1.6 September 2002
MOSEL VITELIC
V54C3256(16/80/40)4V(T/S/B)
1. Bank Activate Command Cycle
(CAS latency = 3)
2. Burst Read Operation
(Burst Length = 4, CAS latency = 2, 3)
T0
ADDRESS
CLK
T0
T
T1
T
T
T
T
COMMAND
NOP
NOP
NOP
Bank A
Row Addr.
Bank A
Activate
Write A
with Auto
Bank A
Col. Addr.
. . . . . . . . . .
. . . . . . . . . .
. . . . . . . . . .
Bank B
Activate
Bank A
Row Addr.
Bank A
Activate
t
RCD
: “H” or “L”
t
RC
t
RRD
Bank B
Row Addr.
COMMAND
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DOUT A
0
CAS latency = 2
t
CK2,
I/O’s
t
CK3,
I/O’s
CAS latency = 3
DOUT A
1
DOUT A
2
DOUT A
3
NOP
CLK
T2
T1
T3
T4
T5
T6
T7
T8
DOUT A
0
DOUT A
1
DOUT A
2
DOUT A
3
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