參數(shù)資料
型號(hào): V54C3256164VBF7
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
封裝: LEAD FREE, MO-210, FBGA-60
文件頁(yè)數(shù): 39/50頁(yè)
文件大小: 728K
代理商: V54C3256164VBF7
44
V54C3256(16/80/40)4VB Rev. 1.0 December 2003
ProMOS TECHNOLOGIES
V54C3256(16/80/40)4VB
1
9
.2
P
re
c
h
a
rge
T
e
rm
ina
tion
of
a
Burs
t(
2
of
2
)
Bur
s
tLeng
th
=
4,
8,
CAS
Lat
ency
=
3
CLK
CKE
CS
I/O
RAS
CAS
WE
BA
D
QM
T2
T3
T4
T0
T1
T6
T7
T8
T9
T5
T11
T12
T13
T14
T10
T16
T17
T18
T19
T15
T22
T20
T21
Hi-Z
AP
Addr
t CK3
Precharge
Command
Bank
A
DAx0
Precharge
Termination
of
a
Write
Burst.
Write
Data
is
masked
Ay0
Ay1
Ay2
Precharge
Termination
Precharge
Command
Bank
A
t RP
Activate
Command
Bank
A
RAx
Write
Command
Bank
A
CAx
CAy
Read
Command
Bank
A
High
Activate
Command
Bank
A
RAy
t RP
Activate
Command
Bank
A
RAz
of
a
Read
Burst.
相關(guān)PDF資料
PDF描述
V54C3256164VBJ7PC 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
VT-800-DFR-406C-20M0000000 TCVCXO, CLIPPED SINE OUTPUT, 20 MHz
VT-800-FFR-106A-16M3960000 TCVCXO, CLIPPED SINE OUTPUT, 16.396 MHz
VT-800-FFR-106A-26M0000000 TCVCXO, CLIPPED SINE OUTPUT, 26 MHz
VT-800-FFR-106C-20M0000000 TCVCXO, CLIPPED SINE OUTPUT, 20 MHz
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