參數(shù)資料
型號: V58C2128
廠商: Mosel Vitelic, Corp.
英文描述: HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM
中文描述: 高性能2.5伏128兆位DDR SDRAM內(nèi)存
文件頁數(shù): 43/59頁
文件大?。?/td> 948K
代理商: V58C2128
43
MOSEL VITELIC
IBIS: I/V Characteristics for Input and Output Buffers
V58C2128(804/404/164)S
V58C2128(804/404/164)S Rev. 1.6 March 2002
Normal strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figure b.
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages from
0 to VDDQ/2
Figure 25. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V)
Typical Low
Typical High
Minimum
Maximum
Typical Low
Typical High
Minimum
Maximum
0.1
6.0
6.8
4.6
9.6
-6.1
-7.6
-4.6
-10.0
Minimum
Typical
Low
Typical
High
Maximum
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
I
Vout(V)
Maximum
Typical
High
Minumum
I
-220
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
0.0
0.5
1.0
1.5
2.0
2.5
Typical
Low
V
DDQ
Vout(V)
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