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參數(shù)資料
| 型號(hào)： | VCR2N |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | JFET Voltage-Controlled Resistor(最大柵源擊穿電壓-7V，最大導(dǎo)通電阻60Ω的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | 結(jié)型場(chǎng)效應(yīng)管壓控電阻（最大柵源擊穿電壓在- 7V，最大導(dǎo)通電阻60Ω的?溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 37K |
| 代理商： | VCR2N |
VCR2N/4N/7N
Siliconix
S-52424—Rev. D, 14-Apr-97
1
JFET Voltage-Controlled Resistors
Product Summary
Part Number
V
GS(off)
Max (V)
V
(BR)GSS
Min (V)
r
DS(on)
Max ( )
VCR2N
–7
–25
60
VCR4N
–7
–25
600
VCR7N
–5
–25
8000
Features
Continuous Voltage-Controlled
Resistance
High Off-Isolation
High Input Impedance
Benefits
Gain Ranging Capability/Wide Range
Signal Attenuation
No Circuit Interaction
Simplified Drive
Applications
Variable Gain Amplifiers
Voltage Controlled Oscillator
AGC
Description
The VCR2N/4N/7N JFET voltage controlled resistors
have an ac drain-source resistance that is controlled by a
dc bias voltage (V
GS
) applied to their high impedance
gate terminal. Minimum r
DS
occurs when V
GS
= 0 V. As
V
GS
approaches the pinch-off voltage, r
DS
rapidly
increases. This series of junction FETs is intended for
applications where the drain-source voltage is a low-level
ac signal with no dc component.
Key to device performance is the predictable r
DS
change
versus V
GS
bias where:
These n-channel devices feature r
DS(on)
ranging from 20
to 8000 . All packages are hermetically sealed and may
be
processed
per
MIL-S-19500
Information).
(see
Military
D
S
G and Case
TO-206AA
(TO-18)
Top View
VCR2N, VCR4N
1
2
3
S
C
TO-206AF
(TO-72)
D
G
Top View
1
2
3
4
VCR7N
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70293.
Applications information may also be obtained via FaxBack, request document #70598.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VCR2N_05 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:JFET Voltage-Controlled Resistors |
| VCR2N-E3 | 功能描述:JFET JFET Volt Cont Res RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| VCR2N-E3 | 制造商:Vishay Siliconix 功能描述:JFET |
| VCR315-220A | 制造商:LG Corporation 功能描述:FRAME ASSY TRIPOD(GS-V31M) |
| VCR3P | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:N-CHANNEL JFET |
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