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參數(shù)資料
| 型號： | VCR2N |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | JFET Voltage-Controlled Resistor(最大柵源擊穿電壓-7V，最大導(dǎo)通電阻60Ω的N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | 結(jié)型場效應(yīng)管壓控電阻（最大柵源擊穿電壓在- 7V，最大導(dǎo)通電阻60Ω的?溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 37K |
| 代理商： | VCR2N |
VCR2N/4N/7N
Siliconix
S-52424—Rev. D, 14-Apr-97
3
Typical Characteristics
Output Characteristics (VCR2N)
30
V
GS(off)
= –4 V
0
0.2
0.4
0.6
0.8
1
0
V
DS
– Drain-Source Voltage (V)
–
I
D
–0.5 V
–2.0 V
–2.5 V
–1.0 V
–1.5 V
0
0.1
0.2
0.3
0.4
0.5
Output Characteristics (VCR4N)
V
DS
– Drain-Source Voltage (V)
–
I
D
–3.0 V
25
20
15
5
10
1.0
0
0.8
0.6
0.4
0.2
V
GS
= 0 V
V
GS(off)
= –4.2 V
V
GS
= 0 V
–4.0 V
–3.5 V
–1.5 V
–2.0 V
–3.0 V
–2.5 V
0
0.2
0.4
0.6
0.8
1
Output Characteristics (VCR7N)
V
DS
– Drain-Source Voltage (V)
–
I
D
200
0
160
120
80
40
–0.5 V
–2.0 V
–1.0 V
–1.5 V
V
GS(off)
= –2.5 V
V
GS
= 0 V
Applications
A simple application of a FET VCR is shown in Figure 1,
the circuit for a voltage divider attenuator.
V
IN
Figure 1.
Simple Attenuator Circuit
V
OUT
R
–
+
V
GS
VCR
The output voltage is:
R +
r
DS
V
IN
r
DS
V
OUT
=
It is assumed that the output voltage is not so large as to
push the VCR out of the linear resistance region, and that
the r
DS
is not shunted by the load.
The lowest value which V
OUT
can assume is:
R +
r
DS(on)
V
IN
r
DS(on)
V
OUT(min)
=
Since r
DS
can be extremely large, the highest value is:
V
OUT(max)
= V
IN
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| VCR2N_05 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:JFET Voltage-Controlled Resistors |
| VCR2N-E3 | 功能描述:JFET JFET Volt Cont Res RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| VCR2N-E3 | 制造商:Vishay Siliconix 功能描述:JFET |
| VCR315-220A | 制造商:LG Corporation 功能描述:FRAME ASSY TRIPOD(GS-V31M) |
| VCR3P | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:N-CHANNEL JFET |
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