參數(shù)資料
型號: VG26S17400DJ-5
英文描述: DRAM|FAST PAGE|4MX4|CMOS|SOJ|26PIN|PLASTIC
中文描述: 內(nèi)存|快速頁面| 4MX4 |的CMOS | SOJ | 26PIN |塑料
文件頁數(shù): 5/25頁
文件大小: 212K
代理商: VG26S17400DJ-5
Document:1G5-0126
Rev.1
Page 5
VIS
VG26(V)(S)17400D
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Absolute Maximum Rating
Recommended DC Operating Conditions
Parameter/Condition
Capacitance
Ta = 25°C, V
CC
=
% or
%, f = 1MHz
Note : 1. Capacitance measured with effective capacitance measuring method.
2. CAS = V
IH
to disable Dout.
Parameter
Symbol
V
T
Value
Unit
V
Voltage on any pin relative to Vss 5V
3.3V
-1.0 to + 7.0
-0.5 to + 4.6
-1.0 to + 7.0
-0.5 to + 4.6
50
1.0
Supply voltage relative to Vss 5V
3.3V
V
cc
V
Short circuit output current
Power dissipation
I
OUT
P
D
T
OPT
T
STG
mA
W
Operating temperature
0 to + 70
°
C
Storage temperature
-55 to + 125
°
C
Symbol
5 Volt Version
Typ
5.0
3.3 Volt Version
Typ
3.3
Unit
Min
4.5
Max
5.5
Min
3.0
Max
3.6
Supply Voltage
V
cc
V
IH
V
IL
V
Input High Voltage, all inputs
Input Low Voltage, all inputs
2.4
-1.0
-
-
V
CC
+ 1.0
0.8
2.0
-0.3
-
-
V
CC
+ 0.3
0.8
V
V
Parameter
Symbol
C
l1
C
l2
Typ
-
Max
5
Unit
pF
Note
1
Input capacitance (Address)
Input capacitance
(RAS, CAS, OE, WE)
Output capacitance
(Data - in, Data - out)
-
7
pF
1
C
I/O
-
7
pF
1,2
5V 10
3.3V 10
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