參數(shù)資料
型號: VG26V17400CJ-5
廠商: VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
封裝: 0.300 INCH, PLASTIC, SOJ-26/24
文件頁數(shù): 22/25頁
文件大?。?/td> 310K
代理商: VG26V17400CJ-5
Document:1G5-0087
Rev.4
Page 6
VIS
VG26(V)(S)17400C
4,194,304 x 4 - Bit
CMOS Dynamic RAM
DC Characteristics; 5 - Volt verion
(Ta= 0 to 70°C, VCC = + 5V 10%, Vss = 0V)
Parameter
Symbol
Test Conditions
VG26 (V) (S) 17400C
Unit Notes
-5
-6
Min
Max
Min
Max
Operating
current
ICC1
RAS cycling
CAS cycling
tRC = min.
-
110
-
100 mA
1, 2
Standby
Current
Low
power
S - version
ICC2
TTL interface
RAS, CAS = VIH
Dout = high - Z
-
2
-
2
mA
CMOS interface
- 0.2V
Dout = high - Z
-
0.25
-
0.25
mA
Standard
power
version
TTL interface
RAS, CAS = VIH
Dout = high - Z
-
2
-
2
mA
CMOS interface
- 0.2V
Dout = high - Z
-
1
-
1
mA
RAS - only
refresh current
ICC3
RAS cycling, CAS = VIH
tRC = min.
-
110
-
100
mA
1, 2
Fast page mode
current
ICC4
tPC = min.
-
80
-
70
mA
1,3
CAS - before - RAS
refresh current
ICC5
tRC = min.
RAS, CAS cycling
-
110
-
100
mA
1, 2
Self - refresh currant
(S - Version)
ICC8
-
350
-
350
CAS - before - RAS
long refresh
current (S - Version)
ICC9
Standby : VCC -
CAS before RAS refresh :
2048 cycles/128ms
RAS, RAS :
VCC -
(Max)
Dout = high - Z,
-
500
-
500
±
RAS CAS
,
V
CC
RAS CAS
,
V
CC
t
RASS
100
S
A
0.2V
RAS
0V
V
IL
0.2V
0.2V
V
IH
V
IH
t
RAS
300ns
A
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