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參數(shù)資料
| 型號： | VG26V17400CJ-5 |
| 廠商： | VANGUARD INTERNATIONAL SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-26/24 |
| 文件頁數(shù)： | 3/25頁 |
| 文件大?。?/td> | 310K |
| 代理商： | VG26V17400CJ-5 |
Document:1G5-0087
Rev.4
Page 11
VIS
VG26(V)(S)17400C
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Read Cycle
Write Cycle
Read - Modigy - Write Cycle
Parameter
Symbol
VG26 (V) (S) 17400C
Unit
Notes
-5
-6
Min
Max
Min
Max
Access time from RAS
tRAC
-
50
-
60
ns
12
Access time from CAS
tCAC
-
13
-
15
ns
13,14
Access time from column address
tAA
-
25
-
30
ns
14,15
Access time from OE
tOEA
-
13
-
15
ns
Read command setup time
tRCS
0
-
0
-
ns
7
Read command hold time to CAS
tRCH
0
-
0
-
ns
10,16
Read command hold time to RAS
tRRH
0
-
0
-
ns
16
Output buffer turn-off time
tOFF
0
13
0
15
ns
17
Output buffer turn-off time from OE
tOEZ
0
13
0
15
ns
17
Parameter
Symbol
VG26 (V) (S) 17400C
Unit
Notes
-5
-6
Min
Max
Min
Max
Write command setup time
tWCS
0
-
0
-
ns
7,18
Write command hold time
tWCH
8
-
10
-
ns
Write command pulse width
tWP
8
-
10
-
ns
Write command to RAS lead time
tRWL
13
-
15
-
ns
Write command to CAS lead time
tCWL
8
-
10
-
ns
Data-in setup time
tDS
0
-
0
-
ns
19
Data-in hold time
tDH
8
-
10
-
ns
19
Parameter
Symbol
VG26 (V) (S) 17400C
Unit
Notes
-5
-6
Min
Max
Min
Max
Read - modify - write cycle time
tRWC
125
-
150
-
ns
RAS to WE delay time
tRWD
65
-
80
-
ns
18
CAS to WE delay time
tCWD
30
-
35
-
ns
18
Column address to WE delay time
tAWD
40
-
50
-
ns
18
OE hold time from WE
tOEH
8
-
10
-
ns
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VG26V17400DJ-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| VG26V17400DJ-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DRAM|FAST PAGE|4MX4|CMOS|SOJ|26PIN|PLASTIC |
| VG26V17400DT-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| VG26V17400DT-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| VG26V17400EJ-5 | 制造商:VML 制造商全稱:VML 功能描述:4,194,304 x 4 - Bit CMOS Dynamic RAM |
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