參數(shù)資料
型號(hào): VG36641641DT-6
廠商: Electronic Theatre Controls, Inc.
英文描述: CMOS Synchronous Dynamic RAM
中文描述: 同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器的CMOS
文件頁(yè)數(shù): 61/69頁(yè)
文件大?。?/td> 1364K
代理商: VG36641641DT-6
Document :1G5-0177
Rev.2
Page 61
VIS
VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Full Page Read Cycle (2 of 2)
CLK
CKE
CS
RAS
CAS
WE
A10
ADD
DQM
DQ
tCK3
Burst Length=Full Page, CAS Latency=3
Activate
Command
Bank A
Read
Hi-Z
Command
Bank A
Ra
QAa+1
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Burst Stop
Command
Read
Command
Bank B
QAa
Full page burst operation
does not teminate when
the burst length is satisfied;
the burst counter increments
and continues bursting
beginning with the starting
address
Ra
Ca
Rb
High
Activate
Command
Bank B
Ra
Rb
Ca
QAa+2 QAa-2 QAa-1
QAa
QAa+1 QBa0
QBa+1 QBa+2QBa+3 QBa+4 QBa+5
Activate
Command
Bank B
Precharge
Command
Bank B
Ra
* BS1=”L”, Bank C,D = Idle
*BS0
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