參數(shù)資料
型號: VG36641641DTL-6
廠商: Electronic Theatre Controls, Inc.
英文描述: CMOS Synchronous Dynamic RAM
中文描述: 同步動態(tài)隨機存儲器的CMOS
文件頁數(shù): 17/69頁
文件大?。?/td> 1364K
代理商: VG36641641DTL-6
Document :1G5-0177
Rev.2
Page 17
VIS
VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
5.1 Burst Length and Sequence
(Burst of Two)
(Burst of Four)
(Burst of Eight)
Full page burst is an extension of the above tables of sequential addressing, with the length being 1,024
(for 16Mx4), 512 (for 8M x 8) and 256 (for 4Mx16).
Starting Address
(column address A0, binary)
Sequential Addressing
Sequence (decimal)
Interleave Addressing Sequence
(decimal)
0
0, 1
0, 1
1
1, 0
1, 0
Starting Address
(column address A1 - A0, binary)
Sequential Addressing
Sequence (decimal)
Interleave Addressing Sequence (decimal)
00
0, 1, 2, 3
0, 1, 2, 3
01
1, 2, 3, 0
1, 0, 3, 2
10
2, 3, 0, 1
2, 3, 0, 1
11
3, 0, 1, 2
3, 2, 1, 0
Starting Address
(column address A2 - A0, binary)
Sequential Addressing
Sequence (decimal)
Interleave Addressing Sequence
(decimal)
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
011
3, 4, 5, 6, 7, 0, 1 ,2
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6 ,7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7 ,0 ,1 ,2 ,3 ,4 ,5
6, 7, 4, 5, 2, 3, 0, 1
111
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
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