參數(shù)資料
型號(hào): VN0605T
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,最小夾斷電流0.18A的N溝道增強(qiáng)型MOSFET)
中文描述: N溝道增強(qiáng)型MOSFET晶體管(最小漏源擊穿電壓60V的,最小夾斷電流0.18A的N溝道增強(qiáng)型MOSFET的)
文件頁數(shù): 3/4頁
文件大?。?/td> 73K
代理商: VN0605T
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
Document Number: 70212
S-00528—Rev. F, 03-Mar-00
www.vishay.com FaxBack 408-970-5600
11-3
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
Output Characteristics
Transfer Characteristics
V
DS
– Drain-to-Source Voltage (V)
I
V
GS
= 10, 9, 8, 7 V
6.5 V
V
GS
– Gate-to-Source Voltage (V)
I
T
A
= –55 C
125 C
6 V
5.5 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
2, 1 V
25 C
0
4
8
12
16
20
0
400
800
1200
1600
2000
2400
0
0.5
1.0
1.5
2.0
–55
–30
–5
20
45
70
95
120
145
0
1
2
3
4
5
6
7
0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
0
5
10
15
20
25
30
Gate Charge
On-Resistance vs. Drain Current
V
Q
g
– Total Gate Charge (pC)
V
DS
– Drain-to-Source Voltage (V)
C
C
rss
C
oss
C
iss
V
DS
= 30 V
I
D
= 0.5 A
r
I
D
– Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
V
GS
= 10 V, r
DS
@ 0.5 A
T
J
– Junction Temperature ( C)
(
r
r
DS
@ 10 V = V
GS
r
DS
@ 5 V = V
GS
T
J
= 25 C
V
GS
= 5 V, r
DS
@ 0.05 A
V
= 0 V
f = 1 MHz
)
)
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