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參數(shù)資料
| 型號(hào)： | VN0808L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓80V，夾斷電流0.3A的N溝道增強(qiáng)型MOSFET) |
| 中文描述： | N溝道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓80V的，夾斷電流0.3A的N溝道增強(qiáng)型MOSFET的） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | VN0808L |
VN0808L/LS, VQ1006P
Vishay Siliconix
www.siliconix.com FaxBack 408-970-5600
2
Document Number: 70214
S-58620—Rev.C , 21-Jun-99
Limits
VN0808L/LS
VQ1006P
Parameter
Symbol
Test Conditions
TYP
a
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
125
80
90
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.6
0.8
2
0.8
2.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
15 V
100
100
nA
T
J
= 125 C
500
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 80 V, V
GS
= 0 V
10
A
T
J
= 125 C
500
V
DS
= 72 V, V
GS
= 0 V
1
T
J
= 125 C
500
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
1.8
1.5
1.5
A
D i S
Drain-Source On-Resistance
O R
b
V
GS
= 5 V, I
D
= 0.3 A
3.8
5
r
DS(on)
V
GS
= 10 V, I
D
= 1 A
3.6
4
4.5
T
J
= 125 C
6.7
8
8.6
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
350
170
170
mS
Common Source Output Conductance
b
g
os
V
DS
= 10 V, I
D
= 0.1 A
0.23
Dynamic
Input Capacitance
C
iss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
25 V V
0 V f
35
50
60
Output Capacitance
C
oss
15
40
50
pF
Reverse Transfer Capacitance
C
rss
2
10
10
Switching
c
Turn-On Time
t
ON
V
DD
= 25 V, R
L
= 23
1 A V
I
D
1 A, V
= 10 V
R
G
= 25
6
10
10
ns
Turn-Off Time
t
OFF
8
10
10
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing..
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VNDQ09
2%.
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| VN0808M | TRANSISTOR MOSFET TO 92 E LINE TO 237 |
| VN0808 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓80V,N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN0808L-G | 功能描述:MOSFET 80V 4Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN0808L-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN0808L-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN0808L-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VN0808L-G P013 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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