參數(shù)資料
型號(hào): VN0808L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓80V,夾斷電流0.3A的N溝道增強(qiáng)型MOSFET)
中文描述: N溝道增強(qiáng)型MOSFET晶體管(最小漏源擊穿電壓80V的,夾斷電流0.3A的N溝道增強(qiáng)型MOSFET的)
文件頁(yè)數(shù): 4/4頁(yè)
文件大小: 93K
代理商: VN0808L
VN0808L/LS, VQ1006P
Vishay Siliconix
www.siliconix.com FaxBack 408-970-5600
4
Document Number: 70214
S-58620—Rev.C , 21-Jun-99
Threshold Region
Capacitance
Gate Charge
Load Condition Effects on Switching
N
T
t
1
– Square Wave Pulse Duration (sec)
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Q
g
– Total Gate Charge (pC)
I
C
V
t
125
100
75
0
0
10
50
50
25
20
30
40
Coss
Ciss
Crss
VGS= 0 V
f = 1 MHz
10
1
0.01
0.5
0.1
1.0
1.5
2.0
25 C
–55 C
125 C
VGS= 5 V
T
J
= 150 C
15.0
12.5
10.0
0
0
100
500
7.5
5.0
200
300
400
2.5
ID= 1.0 A
VDS= 45 V
72 V
0.1
1
2
100
10
1
V
DD
= 25 V
R
L
= 23
V
GS
= 0 to 10 V
I
D
= 1.0 A
t
d(on)
t
d(off)
t
r
t
f
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
1
100
10
1 K
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156 C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
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