參數(shù)資料
型號: VN10KT
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 310MA I(D) | TO-236AB
中文描述: 晶體管| MOSFET的| N溝道| 60V的五(巴西)直| 310MA(?。﹟對236AB
文件頁數(shù): 3/4頁
文件大?。?/td> 42K
代理商: VN10KT
VN10KC
Vishay Siliconix
New Product
Document Number: 70967
S-04279
Rev. C, 16-Jul-01
www.vishay.com
11-3
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
I
D
Drain Current (A)
T
J
Junction Temperature ( C)
1.0
0
1
2
3
4
5
0.8
0.6
0.4
0.2
0
6 V
4 V
5 V
2 V
3 V
50
0
0.4
0.8
1.2
1.6
2.0
40
30
20
10
0
1.9 V
1.8 V
1.6 V
1.5 V
1.2 V
1.4 V
0.5
0.4
0.3
0
0
1
5
0.2
0.1
2
3
4
125 C
T
A
=
55 C
5
4
3
0
0
0.2
1.0
2
1
0.4
0.6
0.8
2.25
2.00
1.75
0.50
50
10
150
1.50
1.25
30
70
110
1.00
0.75
0.1 A
7
0
4
8
12
16
20
6
5
4
0
3
2
1
250 mA
500 mA
T
A
= 25 C
V
GS
= 2.0 V
V
GS
= 10 V
V
DS
= 15 V
I
D
= 50 mA
V
GS
= 10 V
V
GS
= 10 V
I
D
= 0.5 A
25 C
I
D
I
D
I
D
r
D
r
D
r
D
(
N
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