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參數(shù)資料
| 型號： | VND5N07FM |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET |
| 中文描述： | ？OMNIFET？：完全AUTOPROTECTED功率MOSFET |
| 文件頁數(shù)： | 15/15頁 |
| 文件大?。?/td> | 367K |
| 代理商： | VND5N07FM |
15/15
VND5N07/VND5N07-1/VNP5N07FI/K5N07FM
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VND5N07-1 | ?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET |
| VND600-E | DOUBLE CHANNEL HIGH SIDE DRIVER |
| VND60013TR | DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY |
| VND600SP | Double Channel High Side Solid State Relay(雙通道高邊智能功率固態(tài)繼電器) |
| VND600 | DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VND5N07TRE | 制造商:STMicroelectronics 功能描述: |
| VND5N07TR-E | 功能描述:MOSFET N-Ch 70V 5A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VND5T016ASP-E | 制造商:STMicroelectronics 功能描述: |
| VND5T016ASPTR-E | 功能描述:功率驅(qū)動器IC Double CH High-Side 41V 16mOhm 70A RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND5T035AK-E | 功能描述:功率驅(qū)動器IC Double Ch High Side 24V 58Vcc 35mOhm RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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