- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄231492 > W25X32-VSSI-Z (WINBOND ELECTRONICS CORP) 32M X 1 FLASH 2.7V PROM, PDSO8 PDF資料下載
參數(shù)資料
| 型號(hào)： | W25X32-VSSI-Z |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 32M X 1 FLASH 2.7V PROM, PDSO8 |
| 封裝： | 0.208 INCH, ROHS COMPLIANT, SOIC-8 |
| 文件頁(yè)數(shù)： | 16/47頁(yè) |
| 文件大?。?/td> | 1317K |
| 代理商： | W25X32-VSSI-Z |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)當(dāng)前第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)
W25X16, W25X32, W25X64
Publication Release Date: June 28, 2006
- 23 -
Preliminary - Revision B
11.2.9 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction
except that data is output on two pins, DO and DIO, instead of just DO. This allows data to be
transferred from the W25X16/32/64 at twice the rate of standard SPI devices. The Fast Read Dual
Output instruction is ideal for quickly downloading code from Flash to RAM upon power-up or for
applications that cache code-segments to RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 10. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy
clocks is “don’t care”. However, the DIO pin should be high-impedance prior to the falling edge of the
first data out clock.
Figure 10. Fast Read Dual Output Instruction Sequence Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WF1024K32E-150H2M | 4M X 8 FLASH 12V PROM MODULE, 150 ns, CHIP66 |
| WS128K48-20G4WMA | 768K X 8 MULTI DEVICE SRAM MODULE, 20 ns, CQFP116 |
| WSF512K32-39G2TMA | SPECIALTY MEMORY CIRCUIT, CQFP68 |
| WS512K16-35DLIA | 512K X 16 MULTI DEVICE SRAM MODULE, 35 ns, CDMA44 |
| WS512K8-35CQ | 512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, DMA32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25X32VZEI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X32VZEIG | 功能描述:IC FLASH 32MBIT 75MHZ 8WSON RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| W25X32VZEIG T&R | 功能描述:IC FLASH 32MBIT 75MHZ 8WSON RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| W25X32VZEIZ | 制造商:WINBOND 制造商全稱:Winbond 功能描述:16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| W25X32VZPI | 制造商:WINBOND 制造商全稱:Winbond 功能描述:16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。