參數(shù)資料
型號(hào): W25X40BLSNIG
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 4M X 1 FLASH 2.7V PROM, PDSO8
封裝: 0.150 INCH, GREEN, PLASTIC, SOIC-8
文件頁(yè)數(shù): 26/53頁(yè)
文件大小: 2041K
代理商: W25X40BLSNIG
W25X10BL/20BL/40BL
- 32 -
9.2.19
Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC
Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code
“B9h” as shown in figure 19.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-
down instruction will not be executed. After /CS is driven high, the power-down state will entered within
the time duration of tDP (See AC Characteristics). While in the power-down state only the Release from
Power-down / Device ID instruction, which restores the device to normal operation, will be recognized.
All other instructions are ignored. This includes the Read Status Register instruction, which is always
available during normal operation. Ignoring all but one instruction makes the Power Down state a
useful condition for securing maximum write protection. The device always powers-up in the normal
operation with the standby current of ICC1.
Figure 19. Deep Power-down Instruction Sequence Diagram
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