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參數(shù)資料
| 型號： | W3E232M16S-400STC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封裝： | 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
| 文件頁數(shù)： | 3/22頁 |
| 文件大小： | 0K |
| 代理商： | W3E232M16S-400STC |
W3E232M16S-XSTX
11
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
December 2005
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PRELIMINARY*
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VCC, VCCQ Supply relative to Vss
-1 to 3.6
V
Voltage on I/O pins relative to Vss
-0.5V to VCCQ +0.5V
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +125
°C
NOTE:Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions greater than those indicated in the operational sections of this specication is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE (NOTE 13)
Parameter
Symbol
Max
Unit
Input Capacitance: CK/CK#
CI1
6pF
Addresses, BA0-1 Input Capacitance
CA
8
pF
Input Capacitance: All other input-only pins
CI2
6pF
Input/Output Capacitance: I/Os
CIO
10
pF
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1-5, 16)
VCC, VCCQ = +2.5V ± 0.2V; -55°C
≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage (36, 41)
VCC
2.3
2.7
V
I/O Supply Voltage (36, 41, 44)
VCCQ
2.3
2.7
V
Supply Voltage 400Mbs (36,40)
VCC
2.5
2.7
V
I/O Supply Voltage 400Mbs (36, 41, 44)
VCCQ
2.5
2.7
V
Input Leakage Current: Any input 0V ≤ VIN ≤ VCC (All other pins not under test = 0V)
II
-4
4
A
Output Leakage Current: I/Os are disabled; 0V ≤ VOUT ≤ VCCQ
IOZ
-10
10
A
Output Levels: Full drive option (37, 39)
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)
IOH
-12
-
mA
IOL
12
-
mA
Output Levels: Reduced drive option (38, 39)
High Current (VOUT = VCCQ - 0.763V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.763V, maximum VREF, maximum VTT)
IOHR
-9
-
mA
IOLR
9-
mA
I/O Reference Voltage (6,44)
VREF
0.49 x VCCQ
0.51 x VCCQ
V
I/O Termination Voltage (7, 44)
VTT
VREF - 0.04
VREF + 0.04
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3E232M16S-400STCG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2x32Mx16bit DDR SDRAM |
| W3E232M16S-400STI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2x32Mx16bit DDR SDRAM |
| W3E232M16S-400STIG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2x32Mx16bit DDR SDRAM |
| W3E232M16S-XSTX | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2x32Mx16bit DDR SDRAM |
| W3E32M64S-200BC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
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