參數(shù)資料
型號(hào)： W3E32M64S-333BC
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： DRAM
英文描述： 32M X 64 DDR DRAM, 0.7 ns, PBGA219
封裝： 25 X 25 MM, PLASTIC, BGA-219
文件頁(yè)數(shù)： 4/17頁(yè)
文件大?。?/td> 847K
代理商： W3E32M64S-333BC
W3E32M64S-XBX
12
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
February 2007
Rev. 4
Parameter
Symbol
333 Mbs CL 2.5
266 Mbs CL 2.5
200 CL 2
250 Mbs CL2.5
200 Mbs CL2
200 Mbs CL2.5
150 Mbs CL2
Units
Min
Max
Min
Max
Min
Max
Access window of DQs from CLK/CLK#
tAC
-0.70
+0.70
-0.75
+0.75
-0.8
+0.8
-0.8
+0.8
ns
CLK high-level width (30)
tCH
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CLK low-level width (30)
tCL
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Clock cycle time
CL = 2.5 (45, 52)
tCK (2.5)
7.5
13
7.5
13
8
13
10
13
ns
CL = 2 (45, 52)
tCK (2)
10
13
10
13
10
13
15
ns
DQ and DM input hold time relative to DQS (26, 31)
tDH
0.45
0.5
0.6
ns
DQ and DM input setup time relative to DQS (26, 31)
tDS
0.45
0.5
0.6
ns
DQ and DM input pulse width (for each input) (31)
tDIPW
1.75
2
ns
Access window of DQS from CLK/CLK#
tDQSCK
-0.60
+0.60
-0.75
+0.75
-0.8
+0.8
-0.8
+0.8
ns
DQS input high pulse width
tDQSH
0.35
tCK
DQS input low pulse width
tDQSL
0.35
tCK
DQS-DQ skew, DQS to last DQ valid, per group, per access (25, 26)
tDQSQ
0.45
0.5
0.6
ns
Write command to rst DQS latching transition
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS falling edge to CLK rising - setup time
tDSS
0.2
tCK
DQS falling edge from CLK rising - hold time
tDSH
0.2
tCK
Half clock period (34)
tHP
tCH, tCL
ns
Data-out high-impedance window from CLK/CLK# (18, 42)
tHZ
+0.70
+0.75
+0.8
ns
Data-out low-impedance window from CLK/CLK# (18, 43)
tLZ
-0.7
-0.75
-0.8
ns
Address and control input hold time (fast slew rate) (14)
tIHF
0.75
0.90
1.1
ns
Address and control input setup time (fast slew rate) (14)
tISF
0.75
0.90
1.1
ns
Address and control input hold time (slow slew rate) (14)
tIHS
0.8
1
1.1
ns
Address and control input setup time (slow slew rate) (14)
tISS
0.8
1
1.1
ns
LOAD MODE REGISTER command cycle time
tMRD
12
15
16
ns
DQ-DQS hold, DQS to rst DQ to go non-valid, per access (25, 26)
tQH
tHP - tQHS
ns
Data hold skew factor
tQHS
0.55
0.75
1
ns
ACTIVE to PRECHARGE command (35)
tRAS
42
70,000
40
120,000
40
120,000
40
120,000
ns
ACTIVE to READ with Auto precharge command (46)
tRAP
15
20
ns
ACTIVE to ACTIVE/AUTO REFRESH command period
tRC
60
65
70
ns
AUTO REFRESH command period (50)
tRFC
72
75
80
ns
ACTIVE to READ or WRITE delay
tRCD
15
20
ns
PRECHARGE command period
tRP
15
20
ns
DQS read preamble (42)
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
tCK
DQS read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
ACTIVE bank a to ACTIVE bank b command
tRRD
12
15
ns
DQS write preamble
tWPRE
0.25
tCK
DQS write preamble setup time (20, 21)
tWPRES
0000
ns
DQS write postamble (19)
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Write recovery time
tWR
15
ns
Internal WRITE to READ command delay
tWTR
1111
tCK
Data valid output window (25)
na
tQH - tDQSQ
ns
REFRESH to REFRESH command interval (23)
tREFC
70.3
μs
Average periodic refresh interval (23)
tREFI
7.8
μs
Terminating voltage delay to VCC (53)
tVTD
0000
ns
Exit SELF REFRESH to non-READ command
tXSNR
75
80
ns
Exit SELF REFRESH to READ command
tXSRD
200
tCK
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CHARACTERISTICS
(NOTES 1-5, 14-17, 33)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W3E32M64S-333BI 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 333 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk
W3E32M64S-333BM 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 333 MHZ, 219 PBGA, MIL-TEMP. - Bulk
W3E32M64S-333SBC 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 333 MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk
W3E32M64S-333SBI 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 333 MHZ, 208 PBGA, INDUSTRIAL TEMP. - Bulk
W3E32M64S-333SBM 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 333 MHZ, 208 PBGA, MIL-TEMP. - Bulk
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