參數(shù)資料
型號(hào)： W3H64M16E-400BC
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： DRAM
英文描述： 64M X 16 DDR DRAM, 0.6 ns, PBGA79
封裝： 14 X 11 MM, 1.27 MM PITCH, PLASTIC, BGA-79
文件頁(yè)數(shù)： 15/30頁(yè)
文件大?。?/td> 881K
代理商： W3H64M16E-400BC
W3H64M16E-XBX
22
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2009
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specications without notice.
BGA THERMAL RESISTANCE
Description
Symbol
Typical
Units
Notes
Junction to Ambient (No Airow)
Theta JA
TBD
°C/W
1
Junction to Ball
Theta JB
TBD
°C/W
1
Junction to Case (Top)
Theta JC
TBD
°C/W
1
Note: To obtain the junction temperature increase, multiply the thermal resistance by the power dissipated in each die in the MCP.
Refer to "PBGA Thermal Resistance Correlation" (Application Note) at www.whiteedc.com in the application notes section for modeling conditions.
TABLE 8 – INPUT DC LOGIC LEVEL
All voltages referenced to VSS
Parameter
Symbol
Min
Max
Unit
Input High (Logic 1) Voltage
VIH(DC)
VREF + 0.1 25
VCC + 0.300
V
Input Low (Logic 0) Voltage
VIL(DC)
-0.300
VREF - 0.125
V
TABLE 9 – INPUT AC LOGIC LEVEL
All voltages referenced to VSS
Parameter
Symbol
Min
Max
Unit
AC Input High (Logic 1) Voltage DDR2-400 & DDR2-533
VIH(AC)
VREF + 0.250
—
V
AC Input High (Logic 1) Voltage DDR2-667
VIH(AC)
VREF + 0.200
—
V
AC Input Low (Logic 0) Voltage DDR2-400 & DDR2-533
VIL(AC)
—
VREF - 0.250
V
AC Input Low (Logic 0) Voltage DDR2-667
VIL(AC)
—
VREF - 0.200
V
TABLE 10 – ODT DC ELECTRICAL CHARACTERISTICS
All voltages referenced to VSS
Parameter
Symbol
Min
Norm
Max
Unit
Notes
RTT effective impedance value for 75Ω setting EMR (A6, A2) = 0, 1
RTT1(EFF)
52
75
97
Ω
1, 3
RTT effective impedance value for 150Ω setting EMR (A6, A2) = 0, 1
RTT2(EFF)
105
150
195
Ω
1, 3
RTT effective impedance value for 50Ω setting EMR (A6, A2) = 0, 1
RTT3(EFF)
35
50
65
Ω
1, 3
Deviation of VM with respect to VCCQ/2
VM
-6
6
%
2
Note: 1. RTT1(EFF) and RTT2(EFF) are determined by separately applying VIH(AC) and VIL (AC) to the ball being tested, and then measuring current, I(VIH(AC)), and I(VIL(AC)), respectively.
2. Measure voltage (VM) at tested ball with no load
RTT(EFF) = VIH(AC) - VIL(AC)
I(VIH(AC)) - I(VIL(AC))
VM =
(2 x VM - 1) x 100
VCC
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W3H64M16E-400BI 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ - Bulk
W3H64M64E-400SBC 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk
W3H64M64E-400SBI 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY
W3H64M64E-400SBM 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY
W3H64M64E-533SBC 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk
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