參數(shù)資料
型號: W3H64M16E-400BC
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 64M X 16 DDR DRAM, 0.6 ns, PBGA79
封裝: 14 X 11 MM, 1.27 MM PITCH, PLASTIC, BGA-79
文件頁數(shù): 20/30頁
文件大?。?/td> 881K
代理商: W3H64M16E-400BC
W3H64M16E-XBX
27
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2009
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specications without notice.
Parameter
Symbol
667Mbs CL6
533Mbs CL5
400Mbs CL4
Unit
Min
Max
Min
Max
Min
Max
ODT
ODT tum-on delay
tAOND
222222
tCK
ODT turn-on
tAON
tAC(MIN)
tAC(MAX) + 700
tAC(MIN)
tAC(MAX) + 1000
tAC(MIN)
tAC(MAX) + 1000
ps
ODT turn-off delay
tAOFD
2.5
tCK
ODT tum-off
tAOF
tAC(MIN)
tAC(MAX) + 600
tAC(MIN)
tAC(MAX) + 600
tAC(MIN)
tAC(MAX) + 600
ps
ODT tum-on (power-down mode)
tAONPD
tAC(MIN) +
2000
2 x tCK +
tAC(MAX) + 1000
tAC(MIN) +
2000
2 x tCK +
tAC(MAX) + 1000
tAC(MIN) +
2000
2 x tCK +
tAC(MAX) + 1000
ps
ODT turn-off (power-down mode)
tAOFPD
tAC(MIN) +
2000
2.5 x tCK +
tAC(MAX) + 1000
tAC(MIN) +
2000
2.5 x tCK +
tAC(MAX) + 1000
tAC(MIN) +
2000
2.5 x tCK +
tAC(MAX) + 1000
ps
ODT to power-down entry latency
tANPD
333
tCK
ODT power-down exit latency
tAXPD
888
tCK
ODT enable from MRS command
tMOD
12
ns
Power-Down
Exit active power-down to READ
command, MR[bit12=0]
tXARD
222
tCK
Exit active power-down to READ
command, MR[bit12=1]
tXARDS
7-AL
6-AL
tCK
Exit precharge power-down to any
non-READ command
tXP
222
tCK
CKE minimum high/low time
tCKE
333
tCK
AC TIMING PARAMETERS
(continued)
-55°C ≤ TA < +125°C
相關(guān)PDF資料
PDF描述
W3H64M64E-400SBC 64M X 64 DDR DRAM, 0.6 ns, PBGA208
W3H64M72E-400ESI 64M X 72 DDR DRAM, 0.6 ns, PBGA208
W3H64M72E-400ESI 64M X 72 DDR DRAM, 0.6 ns, PBGA208
W3H64M72E-533ES 64M X 72 DDR DRAM, 0.5 ns, PBGA208
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