參數(shù)資料
型號(hào)： W3H64M16E-400BC
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： DRAM
英文描述： 64M X 16 DDR DRAM, 0.6 ns, PBGA79
封裝： 14 X 11 MM, 1.27 MM PITCH, PLASTIC, BGA-79
文件頁數(shù)： 17/30頁
文件大?。?/td> 881K
代理商： W3H64M16E-400BC
W3H64M16E-XBX
24
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2009
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specications without notice.
AC TIMING PARAMETERS
-55°C ≤ TA < +125°C
Parameter
Symbol
667Mbs CL6
533Mbs CL5
400Mbs CL4
Unit
Min
Max
Min
Max
Min
Max
Clock
Clock cycle time
CL=6
tCK(6)
3,000
8,000
CL=5
tCK(5)
3,750
8,000
3,750
8,000
5,000
8,000
ps
CL=4
tCK(4)
5,000
8,000
5,000
8,000
5,000
8,000
ps
CK high-level width
tCH
0.48
0.52
0.48
0.52
0.48
0.52
tCK
CK low-level width
tCL
0.48
0.52
0.48
0.52
0.48
0.52
tCK
Half clock period
tHP
MIN (tCH, tCL)
MIN (tCH, tCL)ps
Clock
(absolute)
Absolute tCK
tCKabs
tCKAVG
(MIN)+ tJITPER
(MIN)
tCKAVG
(MAX)+ tJITPER
(MAX)
tCKAVG
(MIN)+ tJITPER
(MIN)
tCKAVG
(MAX)+ tJITPER
(MAX)
tCKAVG
(MIN)+ tJIT
(MIN)
tCKAVG
(MAX)+ tJITPER
(MAX)
ps
Absolute CK high-level width
tCHabs
tCKAVG
(MIN)* tCHAVG
(MIN)+ tJITDTY
(MIN)
tCKAVG
(MAX)*
tCHAVG
(MAX)+ tJITDTY
(MAX)
tCKAVG
(MIN)* tCHAVG
(MIN)+ tJITDTY
(MIN)
tCKAVG
(MAX)*
tCHAVG
(MAX)+ tJITDTY
(MAX)
tCKAVG
(MIN)* tCHAVG
(MIN)+ tJITDTY
(MIN)
tCKAVG
(MAX)* tCHAVG
(MAX)+ tJITDTY
(MAX)
ps
Absolute CK low-level width
tCLabs
tCKAVG
(MIN)*
tCLAVG
(MIN)+ tJITDTY
(MIN)
tCKAVG
(MAX)*
tCLAVG
(MAX)+ tJITDTY
(MAX)
tCKAVG
(MIN)*
tCLAVG
(MIN)+ tJITDTY
(MIN)
tCKAVG
(MAX)*
tCLAVG
(MAX)+ tJITDTY
(MAX)
tCKAVG
(MIN)*
tCLAVG
(MIN)+ tJITDTY
(MIN)
tCKAVG
(MAX)*
tCLAVG
(MAX)+ tJITDTY
(MAX)
ps
Clock
Jitter
Clock jitter - period
tJITPER
-125
125
-125
125
-125
125
ps
Clock jitter - half period
tJITDUTY
-125
125
-125
125
-150
150
ps
Clock jitter - cycle to cycle
tJITCC
250
ps
Cumulative jitter error, 2 cycles
tERR2per
-175
175
-175
175
-175
175
ps
Cumulative jitter error, 3 cycles
tERR3per
-225
225
-225
225
-225
225
ps
Cumulative jitter error, 4 cycles
tERR4per
-250
250
-250
250
-250
250
ps
Cumulative jitter error, 5 cycles
tERR5per
-250
250
-250
250
-250
250
ps
Cumulative jitter error, 6-10 cycles
tERR6-10per
-350
350
-350
350
-350
350
ps
Cumulative jitter error, 11-50 cycles
tERR11-50per
-450
450
-450
450
-450
450
ps
相關(guān)PDF資料
PDF描述
W3H64M64E-400SBC 64M X 64 DDR DRAM, 0.6 ns, PBGA208
W3H64M72E-400ESI 64M X 72 DDR DRAM, 0.6 ns, PBGA208
W3H64M72E-400ESI 64M X 72 DDR DRAM, 0.6 ns, PBGA208
W3H64M72E-533ES 64M X 72 DDR DRAM, 0.5 ns, PBGA208
W3H64M72E-ESM 64M X 72 DDR DRAM, PBGA208
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W3H64M16E-400BI 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ - Bulk
W3H64M64E-400SBC 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk
W3H64M64E-400SBI 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY
W3H64M64E-400SBM 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY
W3H64M64E-533SBC 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk
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