參數(shù)資料
型號(hào)： W78M64VP110SBC
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA156
封裝： 13 X 22 MM, PLASTIC, BGA-156
文件頁(yè)數(shù)： 19/48頁(yè)
文件大小： 1548K
代理商： W78M64VP110SBC
26
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W78M64VP-XSBX
October 2008
Rev. 2
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
TABLE 33 AC CHARACTERISTICS - HARDWARE RESET (1)
Parameter
Symbol
Min
Max
Unit
RESET# Pin Low (During Embedded Algorithms)
to Read Mode
tready
35
μs
RESET# Pin Low (NOT During Embedded Algorithms)
to Read Mode
tready
35
μs
RESET# Pulse Width
tRP
35
μs
RESET# High Time Before Read
tRH
200
ns
RESET# Low to Standby Mode
tRPD
10
μs
RY/BY# Recovery Time
tRB
0ns
Note:
1.
Not tested.
TABLE 34 POWER-UP SEQUENCE TIMINGS
Parameter
Description
Speed
Unit
tVCS
Reset Low Time from rising edge of VCC (or last Reset pulse) to rising edge of RESET#
35
μs
tVIOS
Reset Low Time from rising edge of VIO (or last Reset pulse) to rising edge of RESET#
35
μs
tRH
Reset High Time before Read
35
200
μs
Notes
1. VIO < VCC + 200 mV.
2. VIO and VCC ramp must be synchronized during power up.
3. If RESET# is not stable for tVCS or tVIOS:
The device does not permit any read and write operations.
A valid read operation returns FFh.
A hardware reset is required.
4. VCC maximum power-up current (RST=VIL) is 20 mA.
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