參數(shù)資料
型號： W78M64VP110SBC
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： 存儲器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA156
封裝： 13 X 22 MM, PLASTIC, BGA-156
文件頁數(shù)： 20/48頁
文件大?。?/td> 1548K
代理商： W78M64VP110SBC
27
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W78M64VP-XSBX
October 2008
Rev. 2
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
TABLE 35 AC CHARACTERISTICS - WRITE/ERASE/PROGRAM OPERATIONS - WE# CONTROLLED
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-100
Min
Max
-120
Min
Max
Unit
Write Cycle Time (3)
tAVAV
tWC
110
120
ns
Chip Select Setup Time (3)
tELWL
tCS
00
ns
Write Enable Pulse Width
tWLWH
tWP
35
ns
Address Setup Time
tAVWL
tAS
00
ns
Data Setup Time
tDVWH
tDS
30
ns
Data Hold Time
tWHDX
tDH
00
ns
Address Hold Time
tWLAX
tAH
45
ns
Write Enable Pulse Width High (3)
tWHWL
tWPH
30
ns
Duration of Byte Programming Operation (1)
tWHWH1
480
μs
Sector Erase (2)
tWHWH2
5
sec
Read Recovery Time before Write (3)
tGHWL
00
ns
VCC Setup Time (3)
tVCS
35
μs
Chip Programming Time (4)
200
sec
Address Setup Time to OE# low during toggle bit polling
tASO
15
ns
Notes:
1.
Typical value for tWHWH1 is 6μs.
2.
Typical value for tWHWH2 is 0.5 sec.
3.
Guaranteed by design, but not tested.
4.
Typical value is 50 sec. The typical chip program time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program
times listed.
TABLE 36 AC CHARACTERISTICS - ALTERNATE CS# CONTROLLED ERASE AND PROGRAM
OPERATIONS
Parameter
Description
Speed
Options
Unit
JEDEC
Std
110
120
tVAVAV
tWS
Write Cycle Time (1)
Min
110
120
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
50
ns
tDVEH
tDS
Data Setup Time
Min
30
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CS# Pulse Width
Min
35
ns
tEHEL
tCPH
CS# Pulse Width High (1)
Min
30
ns
tWHWH1
Programming Operation
Typ
480
μs
tWHWH1
Accelerated Programming Operation
Typ
13.5
μs
tWHWH2
Sector Erase Operation
Typ
0.5
sec
Note:
1.
Not tested.
相關(guān)PDF資料
PDF描述
W7NCF512H11CS6BG 32M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC
W7NCF512H11IS9CG 32M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC
WE128K32-150G2Q 128K X 32 EEPROM 5V MODULE, 150 ns, CQFP68
WE32K32-80G2TI 32K X 32 EEPROM 5V MODULE, 80 ns, CQMA68
WF2M32I-150G2UI5 2M X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W78M64VP110SBM 制造商:Microsemi Corporation 功能描述:8MX64 FLASH 3.3V PAGE MODE - Bulk
W78M64V-XSBX 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash MCP
W78NCSX-23 功能描述:低信號繼電器 - PCB 4PDT 3A 24VDC IND RoHS:否 制造商:NEC 觸點形式:2 Form C (DPDT-BM) 觸點電流額定值: 線圈電壓:5 V 最大開關(guān)電流:1 A 線圈電流:1 A 線圈類型:Non-Latching 功耗:140 mW 端接類型:SMT 絕緣: 介入損耗:
W78PCX-1 制造商:Magnecraft 功能描述:
W78PCX-2 制造商:Magnecraft 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*