參數(shù)資料
型號: W946432AD-6
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 2M X 32 DDR DRAM, 0.1 ns, PQFP100
文件頁數(shù): 20/39頁
文件大?。?/td> 577K
代理商: W946432AD-6
W946432AD
PRELIMINARY DATE: 11/13/01
27
.
Figure18:WRITE TO PRECHARGE – DQSS, INTERRUPTING
WRITE
NOP
PRE
NOP
Bank a,
Col b
DI
b
DQ
DM
DQS
ADDRESS
COMMAND
CK
DON'T CARE
WRITE TO PRECHARGE - DQSS, INTERRUPTING
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
tDQSS
NOP
Bank
(a or all)
T10
T11
tWR
tRP
*1
*2
DI b = Data In for column b
A interrupted burst of 4 or 8 is shown, 2 data elements are written
1 subsequent element of Data In is applied in the programmed order following DI b
tWTR is referenced from the first postive CK edge after the last desired Data In pair
The PRECHARGE command masks the last two data elements in the burst
A8 is LOW with the WRITE command (AUTO PRECHARGE is disabled)
*1 = can be don't care for programmed burst length of 4
*2 = for programmed burst length of 4, DQS becomes don't care at this point
Figure19:POWER - DOWN
CK
VALID
NOP
COMMAND
VALID
tIS
CKE
No column
access
in progress
Enter power-down
mode
Enter power-down
mode
DON'T CARE
POWER - DOWN
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