參數(shù)資料
型號(hào)： W963B6BBN80I
廠商： WINBOND ELECTRONICS CORP
元件分類： SRAM
英文描述： 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48
封裝： 6 X 8 MM, 0.75 MM PITCH, TFBGA-48
文件頁(yè)數(shù)： 27/29頁(yè)
文件大小： 948K
代理商： W963B6BBN80I
W963B6BBN
8. ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
SYMBOL
VALUE
UNIT
Voltage of VDD Supply Relative to VSS
VDD
-0.5 to +3.6
V
Voltage at Any Pin Relative to VSS
VIN, VOUT
-0.5 to +3.6
V
Short Circuit Output Current
IOUT
±50
mA
Storage Temperature
TSTG
-55 to +125
°C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
Recommended Operating Conditions
(Reference to VSS)
PARAMETER
NOTES
SYMBOL
MIN.
MAX.
UNIT
VDD
2.3
2.7
V
Supply Voltage
VSS
0
V
High Level Input Voltage
*1
VIH
2.0
VDD +0.3
V
Low Level Input Voltage
*2
VIL
-0.3
0.4
V
Ambient Temperature
TA
0
70
°C
Ambient Temperature
TA
-25
85
°C
Ambient Temperature
TA
-40
85
°C
Notes
:
*1: Maximum DC voltage on input and I/O pins are VDD +0.3V. During voltage transitions, inputs may positive overshoot to
VDD +1.0V for periods of up to 5 nS.
*2: Minimum DC voltage on input and I/O pins are -0.3V. During voltage transitions, inputs may negative overshoot to -
1.0V for periods of up to 5 nS.
WARNING: Recommended operating conditions are normal operating ranges for the semiconductor device.
All the device’s electrical characteristics are warranted when operated within these ranges.
Always use semiconductor devices within the recommended operating conditions. Operation outside
these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the datasheet. Users considering application outside the listed conditions are advised to contact their
Winbond representative beforehand.
Publication Release Date: March 11, 2003
- 7 -
Revision A1
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