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參數(shù)資料
| 型號(hào)： | X1228 |
| 廠商： | Intersil Corporation |
| 英文描述： | EPD TVS Diode Array for ESD and Latch-Up Protection |
| 中文描述： | 實(shí)時(shí)時(shí)鐘/日歷/ CPU，具有EEPROM的監(jiān) |
| 文件頁數(shù)： | 27/31頁 |
| 文件大?。?/td> | 569K |
| 代理商： | X1228 |
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X1228
REV 1.3 3/24/04
Characteristics subject to change without notice.
27 of 31
www.xicor.com
Referring to Figure 16, Vtrip applies to the “Internal
Vcc” node which powers the entire device. This means
that if Vcc is powered down and the battery voltage at
Vback is higher than the Vtrip voltage, then the entire
chip will be running from the battery. If Vback falls to
lower than Vtrip, then the chip shuts down and all out-
puts are disabled except for the oscillator and time-
keeping circuitry. The fact that the chip can be powered
from Vback is not necessarily an issue since standby
current for the RTC devices is <2μA for this mode
(called “main timekeeping current” in the data sheet).
Only when the serial interface is active is there an
increase in supply current, and with Vcc powered
down, the serial interface will most likely be inactive.
One way to prevent operation in battery backup mode
above the Vtrip level is to add a diode drop (silicon
diode preferred) to the battery to insure it is below
Vtrip. This will also provide reverse leakage protection
which may be needed to get safety agency approval.
One mode that should always be avoided is the opera-
tion of the RTC device with Vback greater than both
Vcc and Vtrip (Condition 2d in Table 8). This will cause
the battery to drain quickly as serial bus communica-
tion and non-volatile writes will require higher supplier
current.
PERFORMANCE DATA
I
BACK
Performance
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
I
BACK
vs. Temperature
Multi-Lot Process Variation Data
Temperature °C
-40
25
60
85
I
B
3.3V
1.8V
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| X1228S14 | 功能描述:IC RTC CPU SUP WDT 4K EE 14-SOIC RoHS:否 類別:集成電路 (IC) >> 時(shí)鐘/計(jì)時(shí) - 實(shí)時(shí)時(shí)鐘 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:- 類型:時(shí)鐘/日歷 特點(diǎn):警報(bào)器，閏年，SRAM 存儲(chǔ)容量:- 時(shí)間格式:HH:MM:SS（12/24 小時(shí)） 數(shù)據(jù)格式:YY-MM-DD-dd 接口:SPI 電源電壓:2 V ~ 5.5 V 電壓 - 電源，電池:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN EP 包裝:管件 |
| X1228S14-2.7 | 功能描述:IC RTC CPU SUP WDT 4K EE 14-SOIC RoHS:否 類別:集成電路 (IC) >> 時(shí)鐘/計(jì)時(shí) - 實(shí)時(shí)時(shí)鐘 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:1 系列:- 類型:時(shí)鐘/日歷 特點(diǎn):警報(bào)器，閏年，SRAM 存儲(chǔ)容量:- 時(shí)間格式:HH:MM:SS（12/24 小時(shí)） 數(shù)據(jù)格式:YY-MM-DD-dd 接口:SPI 電源電壓:2 V ~ 5.5 V 電壓 - 電源，電池:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN EP 包裝:管件 |
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