參數(shù)資料
型號(hào)： X3100V
英文描述： QFN,GREEN,IND TEMP,T&R(ARM)
中文描述： 電池管理
文件頁(yè)數(shù)： 24/40頁(yè)
文件大小： 249K
代理商： X3100V
X3100/X3101 – Preliminary Information
Characteristics subject to change without notice.
24 of 40
REV 1.1.8 12/10/02
www.xicor.com
EEPROM Write Sequence (EEWRITE)
Prior to any attempt to write data into the EEPROM of
the X3100 or X3101, the “Write Enable” latch must first
be set by issuing the WREN instruction (See Table 30
and Figure 11). CS is first taken LOW. Then the WREN
instruction is clocked into the X3100 or X3101. After all
eight bits of the instruction are transmitted, CS must
then be taken HIGH. If the user continues the write
operation without taking CS HIGH after issuing the
WREN instruction, the write operation will be ignored.
To write data to the EEPROM memory array, the user
issues the EEWRITE instruction, followed by the 16 bit
address and the data to be written. Only the last 9 bits of
the address are used and bits [15:9] are specified to be
zeroes. This is minimally a thirty-two clock operation. CS
must go LOW and remain LOW for the duration of the
operation. The host may continue to write up to 16 bytes
of data to the X3100 or X3101. The only restriction is the
16 bytes must reside on the same page. If the address
counter reaches the end of the page and the clock
continues, the counter will “roll over” to the first address
of the page and overwrite any data that may have been
previously written.
For a byte or page write operation to be completed, CS
can only be brought HIGH after bit 0 of the last data byte
to be written is clocked in. If it is brought HIGH at any
other time, the write operation will not be completed.
Refer to Figure 12 and Figure 13 for detailed illustration
of the write sequences and time frames in which CS
going HIGH are valid.
EEPROM Read Status Operation (EEREAD STAT)
If there is not a nonvolatile write in progress, the
EEREAD STAT instruction returns the IDLock byte from
the IDLock register which contains the IDLock bits IDL2-
IDL0 (Table 29). The IDLock bits define the IDLock
condition (Table 28). The other bits are reserved and will
return ‘0’ when read.
If a nonvolatile write to the EEPROM (i.e. EEWRITE
instruction) is in progress, the EEREAD STAT returns a
HIGH on SO. When the nonvolatile write cycle in the
EEPROM is completed, the status register data is read
out.
Clocking SCK is valid during a nonvolatile write in
progress, but is not necessary. If the SCK line is clocked,
the pointer to the status register is also clocked, even
though the SO pin shows the status of the nonvolatile
write operation (See Figure 14).
Figure 12. EEPROM Byte Write (EEWRITE) Operation Sequence
0
1
2
3
4
5
6
7
8
9
CS
SCK
SI
SO
High Impedance
EEWRITE Instruction
(1 Byte)
Byte Address (2 Byte)
Data Byte
15
14
3
2
1
0
20
21
22
23
24
25
26
27
28
29
30
31
7
6
5
4
3
2
1
0
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
X3100V28 功能描述:IC PROTECT/MONITOR 4CELL 28TSSOP RoHS:否 類別:集成電路 (IC) >> PMIC - 電池管理 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 功能:充電管理 電池化學(xué):鋰離子（Li-Ion）、鋰聚合物（Li-Pol） 電源電壓:3.75 V ~ 6 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:SC-74A，SOT-753 供應(yīng)商設(shè)備封裝:SOT-23-5 包裝:剪切帶 (CT) 產(chǎn)品目錄頁(yè)面:669 (CN2011-ZH PDF) 其它名稱:MCP73831T-2ACI/OTCT
X3100V28I 功能描述:IC PROTECT/MONITOR 4CELL 28TSSOP RoHS:否 類別:集成電路 (IC) >> PMIC - 電池管理 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 功能:充電管理 電池化學(xué):鋰離子（Li-Ion）、鋰聚合物（Li-Pol） 電源電壓:3.75 V ~ 6 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:SC-74A，SOT-753 供應(yīng)商設(shè)備封裝:SOT-23-5 包裝:剪切帶 (CT) 產(chǎn)品目錄頁(yè)面:669 (CN2011-ZH PDF) 其它名稱:MCP73831T-2ACI/OTCT
X3100V28T1 功能描述:IC PROTECT/MONITOR 4CELL 28TSSOP RoHS:否 類別:集成電路 (IC) >> PMIC - 電池管理 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 功能:充電管理 電池化學(xué):鋰離子（Li-Ion）、鋰聚合物（Li-Pol） 電源電壓:3.75 V ~ 6 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:SC-74A，SOT-753 供應(yīng)商設(shè)備封裝:SOT-23-5 包裝:剪切帶 (CT) 產(chǎn)品目錄頁(yè)面:669 (CN2011-ZH PDF) 其它名稱:MCP73831T-2ACI/OTCT
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X3100V28Z 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3 or 4 Cell Li-ion Battery Protection and Monitor IC
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