參數(shù)資料
型號: XCF02SVO20C
廠商: Xilinx Inc
文件頁數(shù): 6/35頁
文件大?。?/td> 0K
描述: IC PROM IN SYST PRG 3.3V 20TSSOP
標準包裝: 74
可編程類型: 系統(tǒng)內(nèi)可編程
存儲容量: 2Mb
電源電壓: 3 V ~ 3.6 V
工作溫度: -40°C ~ 85°C
封裝/外殼: 20-TSSOP(0.173",4.40mm 寬)
供應商設(shè)備封裝: 20-TSSOP
包裝: 管件
Platform Flash In-System Programmable Configuration PROMs
DS123 (v2.18) May 19, 2010
Product Specification
14
R
Recommended Operating Conditions
Quality and Reliability Characteristics
Symbol
Description
XCF01S, XCF02S, XCF04S
XCF08P, XCF16P, XCF32P
Units
Min
Typ
Max
Min
Typ
Max
VCCINT
Internal voltage supply
3.0
3.3
3.6
1.65
1.8
2.0
V
VCCO
Supply voltage
for output
drivers
3.3V Operation
3.0
3.3
3.6
3.0
3.3
3.6
V
2.5V Operation
2.3
2.5
2.7
2.3
2.5
2.7
V
1.8V Operation
1.7
1.8
1.9
1.7
1.8
1.9
V
VCCJ
Supply voltage
for JTAG output
drivers
3.3V Operation
3.0
3.3
3.6
3.0
3.3
3.6
V
2.5V Operation
2.3
2.5
2.7
2.3
2.5
2.7
V
VIL
Low-level input
voltage
3.3V Operation
0
0.8
0
0.8
V
2.5V Operation
0
0.7
0
0.7
V
1.8V Operation
20% VCCO
––
20% VCCO
V
VIH
High-level input
voltage
3.3V Operation
2.0
5.5
2.0
3.6
V
2.5V Operation
1.7
5.5
1.7
3.6
V
1.8V Operation
70% VCCO
3.6
70% VCCO
–3.6
V
TIN
Input signal transition time(1)
500–
–500
ns
VO
Output voltage
0
VCCO
0–
VCCO
V
TA
Operating ambient temperature
–40
85
–40
85
°C
Notes:
1.
Input signal transition time measured between 10% VCCO and 90% VCCO.
Symbol
Description
Min
Max
Units
TDR
Data retention
20
Years
NPE
Program/erase cycles (Endurance)
20,000
Cycles
VESD
Electrostatic discharge (ESD)
2,000
Volts
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