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參數(shù)資料
| 型號(hào)： | XP134A1275SR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | P-Channel Power MOS FET |
| 中文描述： | P溝道功率MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 156K |
| 代理商： | XP134A1275SR |
783
11
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
S1
S2
G1
Source
Source
Gate
4
7~8
5~6
G2
D1
D2
Gate
Drain
Drain
N
P-Channel Power MOS FET
N
DMOS Structure
N
Low On-State Resistance : 0.075
(max)
N
Ultra High-Speed Switching
N
SOP-8 Package
N
2 FET Devices Built-in
G
Notebook PCs
G
Cellular and portable phones
G
On-board power supplies
G
Li-ion battery systems
The XP134A1275SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Two FET devices are built-into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Low on-state resistance
: Rds (on) = 0.075
( Vgs = -4.5V )
: Rds (on) = 0.115
( Vgs = -2.5V )
Ultra high-speed switching
Operational Voltage
: -2.5V
High density mounting
: SOP-8
Ta=25
O
C
UNITS
SYMBOL
RATINGS
Vdss
Vgss
Id
Idp
Idr
Pd
- 20
+12
- 4.5
- 18
- 4.5
2
V
V
A
A
A
W
Tch
Tstg
150
O
C
- 55 ~ 150
O
C
( note ) : When implemented on a glass epoxy PCB
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
相關(guān)PDF資料 |
PDF描述 |
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| XP135A1145SR | POWER MOSFET |
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| XP151A11B0MR | SEE A3214EUA-T |
| XP151A13A0MR | Power MOS FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP134A1275SR_1 | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP135A1145SR | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:POWER MOSFET |
| XP135A1145SR_1 | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP1401 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| XP150 | 制造商:Samson Technologies 功能描述:3-Input Mixer And Speakers Portable PA 150W |
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