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參數(shù)資料
| 型號(hào)： | XP151A13A0MR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | Power MOS FET |
| 中文描述： | 功率MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | XP151A13A0MR |
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N-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.1
(max)
Ultra High-Speed Switching
Gate Protect Diode Built-in
SOT - 23 Package
Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
General Description
Features
The XP151A13A0MR is a N-Channel Power MOS FET with low on
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
Low on-state resistance :
Rds (on) = 0.1
( Vgs = 4.5V )
Rds (on) = 0.14
( Vgs = 2.5V )
Rds (on) = 0.25
( Vgs = 1.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage :
1.5V
High density mounting :
SOT - 23
Pin Configuration
Pin Assignment
PIN NUMBER
1
PIN NAME
G
S
D
Gate
Source
Drain
Equivalent Circuit
Absolute Maximum Ratings
Ta=25
O
C
UNITS
V
SYMBOL
Vdss
Vgss
Id
Idp
Idr
RATINGS
20
+ 8
1
4
1
V
A
A
A
Tch
Tstg
150
O
C
-55 to 150
O
C
N - Channel MOS FET
( 1 device built-in )
( note ) : When implemented on a ceramic PCB
FUNCTION
2
3
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Pd
0.5
W
Storage Temperature
SOT - 23 Top View
1
G
2
S
3
D
1
2
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP151A13A0MR_1 | 制造商:TOREX 制造商全稱(chēng):Torex Semiconductor 功能描述:Power MOSFET |
| XP151A13A0MR_12 | 制造商:TOREX 制造商全稱(chēng):Torex Semiconductor 功能描述:Power MOSFET |
| XP151A13A0MR-G | 制造商:Torex Semiconductor LTD 功能描述: |
| XP151A13A0MRN | 制造商:Torex Semiconductor LTD 功能描述: |
| XP151A13COMR | 制造商:HTSEMI 制造商全稱(chēng):Shenzhen Jin Yu Semiconductor Co., Ltd. 功能描述:20 V N-Channel Enhancement Mode MOSFET |
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