參數(shù)資料
型號: XP135A1145SR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: POWER MOSFET
中文描述: 功率MOSFET
文件頁數(shù): 1/5頁
文件大小: 66K
代理商: XP135A1145SR
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N-Channel/P-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.045
max (Nch)
Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
0.110
max (Pch)
Ultra High-Speed Switching
SOP - 8 Package
Two FET Devices Built-in
General Description
Features
Low on-state resistance (Nch) :
The XP135A1145SR is a N-Channel/P-Channel Power MOS FET
with low on-state resistance and ultra high-speed switching
characteristics.
Low on-state resistance (Pch) :
Two FET devices are built-into the one package.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Ultra high-speed switching
Operational Voltage :
4.5V (Nch) : -4.5V (Pch)
High density mounting :
SOP - 8
Pin Configuration
Pin Assignment
PIN NUMBER
1
PIN NAME
S1
G1
S2
G2
D2
D1
Source (Nch)
Gate (Nch)
Source (Pch)
Gate (Pch)
Drain (Pch)
Drain (Nch)
5
Equivalent Circuit
Absolute Maximum Ratings
Ta=25
O
C
SYMBOL
RATINGS
Nch
UNITS
Vdss
Vgss
Id
Idp
Idr
Pd
30
V
V
A
A
A
W
20
6
20
6
- 30
Pch
20
- 4
- 16
- 4
2
Tch
Tstg
150
O
C
- 55 to 150
O
C
N-Channel/P - Channel MOS FET
( 2 devices built-in )
( note ) : When implemented on a glass epoxy PCB
FUNCTION
2
3
4
PARAMETER
5 - 6
7 - 8
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
D1
D2
G1
S2
S1
G2
D1
SOP - 8 Top View
7
6
1
2
3
4
8
Rds (on) = 0.033
( Vgs = 10V )
Rds (on) = 0.045
( Vgs = 4.5V )
Rds (on) = 0.065
( Vgs = -10V )
Rds (on) = 0.110
( Vgs = -4.5V )
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