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參數(shù)資料
| 型號(hào)： | XP152A12C0MR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | MICRO POWER HALL-EFFECT W/TIN PLATING |
| 中文描述： | 功率MOS FET |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 149K |
| 代理商： | XP152A12C0MR |
830
11
N
P-Channel Power MOS FET
N
DMOS Structure
N
Low On-State Resistance : 0.3
(max)
N
Ultra High-Speed Switching
N
Gate Protect Diode Built-in
N
SOT-23 Package
G
Notebook PCs
G
Cellular and portable phones
G
On-board power supplies
G
Li-ion battery systems
The XP152A12C0MR is a P-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
Low on-state resistance
: Rds (on) = 0.3
( Vgs = -4.5V )
: Rds (on) = 0.5
( Vgs = -2.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage
: -2.5V
High density mounting
: SOT-23
Ta=25
O
C
UNITS
SYMBOL
RATINGS
Vdss
Vgss
Id
Idp
Idr
Pd
-20
+12
-0.7
-2.8
-0.7
0.5
V
V
A
A
A
W
Tch
Tstg
150
O
C
-55 ~ 150
O
C
( note ) : When implemented on a ceramic PCB
Storage Temperature
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PARAMETER
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP152A12C0MR_1 | 制造商:TOREX 制造商全稱(chēng):Torex Semiconductor 功能描述:Power MOSFET |
| XP152A12C0MR_12 | 制造商:TOREX 制造商全稱(chēng):Torex Semiconductor 功能描述:Power MOSFET |
| XP152A12C0MR-G | 制造商:TOREX 制造商全稱(chēng):Torex Semiconductor 功能描述:Power MOSFET |
| XP152A12C0MRN | 制造商:Torex Semiconductor LTD 功能描述: |
| XP152A12COMR | 制造商:HTSEMI 制造商全稱(chēng):Shenzhen Jin Yu Semiconductor Co., Ltd. 功能描述:20 V P-Channel Enhancement Mode MOSFET |
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