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參數(shù)資料
| 型號： | XP152A12C0MR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | MICRO POWER HALL-EFFECT W/TIN PLATING |
| 中文描述： | 功率MOS FET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 149K |
| 代理商： | XP152A12C0MR |
831
11
DC Characteristics
Ta=25
°
C
UNITS
μ
A
μ
A
V
PARAMETER
Drain Cut-off Current
SYMBOL
Idss
CONDITIONS
Vds = - 20V , Vgs = 0V
Vgs =
±
12V , Vds = 0V
Id = -1mA , Vds = - 10V
Id = - 0.4A , Vgs = - 4.5V
MIN
TYP
MAX
- 10
Gate-Source Leakage Current
Igss
±
10
- 1.2
0.3
Gate-Source Cut-off Voltage
Vgs (off )
- 0.5
Drain-Source On-state Resistance
( note )
0.23
Id = - 0.4A , Vgs = - 2.5V
0.37
0.5
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
( note ) : Effective during pulse test.
Dynamic Characteristics
Ta=25
°
C
UNITS
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
Input Capacitance
Ciss
180
pF
Output Capacitance
Coss
Crss
Vds = - 10V , Vgs = 0V
120
pF
pF
Feedback Capacitance
f = 1 MHz
60
Switching Characteristics
Ta=25
°
C
UNITS
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
Turn-on Delay Time
td ( on )
5
ns
Rise Time
tr
Vgs = - 5V , Id = - 0.4A
20
ns
Turn-off Delay Time
td ( off )
Vdd = - 10V
55
ns
ns
Fall Time
tf
70
Thermal Characteristics
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Thermal Resistance
Implement on a ceramic
( channel-ambience )
PCB
°
C / W
250
Rth ( ch-a )
Vf
If = - 0.7A , Vgs = 0V
V
-0.8
- 1.1
Id = - 0.4A , Vds = - 10V
| Yfs |
Rds ( on )
S
1.5
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相關代理商/技術參數(shù) |
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|---|---|
| XP152A12C0MR_1 | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP152A12C0MR_12 | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP152A12C0MR-G | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP152A12C0MRN | 制造商:Torex Semiconductor LTD 功能描述: |
| XP152A12COMR | 制造商:HTSEMI 制造商全稱:Shenzhen Jin Yu Semiconductor Co., Ltd. 功能描述:20 V P-Channel Enhancement Mode MOSFET |
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