參數(shù)資料
型號: XR1000
廠商: MIMIX BROADBAND INC
元件分類: 衰減器
英文描述: 17.0-27.0 GHz GaAs MMIC Receiver
中文描述: RF/MICROWAVE DOWN CONVERTER
封裝: DIE-10
文件頁數(shù): 1/6頁
文件大?。?/td> 463K
代理商: XR1000
Mimix Broadband
s 17.0-27.0 GHz GaAs MMIC receiver has a small signal
conversion gain of 10.0 dB with a noise figure of 3.5 dB and 15.0 dB
image rejection across the band. The device is a three stage LNA
followed by an image reject fundamental mixer using Lange couplers to
improve bandwidth. The image reject mixer eliminates the need for a
bandpass filter after the LNA to remove thermal noise at the image
frequency. I and Q mixer outputs are provided and an external 90
degree hybrid is required to select the desired sideband. This MMIC uses
Mimix Broadband
s 0.15
μ
m GaAs PHEMT device model technology, and
is based upon electron beam lithography to ensure high repeatability
and uniformity. The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
17.0-27.0 GHz GaAs MMIC
Receiver
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Input Return Loss LO (S22)
Small Signal Conversion Gain RF/IF (S21)
LO Input Drive (P
LO
)
Image Rejection
Noise Figure (NF)
Isolation LO/RF
Input Power for 1 dB Compression (P1dB)
Input Third Order Intercept (IIP3)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Page 1 of 6
Fundamental Integrated Receiver
10.0 dB Conversion Gain
3.5 dB Noise Figure
15.0 dB Image Rejection
60.0 dB LO/RF Isolation
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Features
GHz
GHz
GHz
GHz
dB
dB
dB
dBm
dBc
dB
dB
dBm
dBm
VDC
VDC
mA
17.0
17.0
15.0
DC
-
-
-
-
-
-
-
-
-
-
-1.0
-
-
-
-
-
10.0
8.0
10.0
+15.0
15.0
3.5
60.0
-15.0
-6.0
+3.0
-0.5
90
27.0
27.0
29.0
2.0
-
-
-
-
-
-
-
-
-
+5.5
0.0
180
+6.0 VDC
200 mA
+0.3 VDC
0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(1) Measured using constant current.
2
(2) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2
May 2005 - Rev 13-May-05
R1000
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