參數(shù)資料
型號: XR1001
廠商: MIMIX BROADBAND INC
元件分類: 衰減器
英文描述: 33.0-40.0 GHz GaAs MMIC Receiver
中文描述: RF/MICROWAVE DOWN CONVERTER
封裝: DIE-6
文件頁數(shù): 1/8頁
文件大?。?/td> 1381K
代理商: XR1001
R1001
Mimix Broadband
s 33.0-40.0 GHz GaAs MMIC receiver has a small
signal conversion gain of 9.0 dB with a noise figure of 4.0 dB and 12.0
dB image rejection across the band. The device is a two stage LNA
followed by a pair of sub-harmonic mixers, configured to form an image
reject mixer which requires an LO at 15.5-21.5 GHz. The image reject
mixer eliminates the need for a bandpass filter after the LNA to remove
thermal noise at the image frequency. The use of a sub-harmonic mixer
makes the provision of the LO easier than for fundamental mixers at
these frequencies. I and Q mixer outputs are provided and an external
90 degree hybrid is required to select the desired sideband. This MMIC
uses Mimix Broadband
s 0.15
μ
m GaAs PHEMT device model
technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Millimeter-wave Point-to-
Point Radio, LMDS, SATCOM and VSAT applications.
33.0-40.0 GHz GaAs MMIC
Receiver
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21) (USB/LSB)
LO Input Drive (P
LO
)
Image Rejection (USB/LSB)
Noise Figure (NF)
Isolation LO/RF @ LOX2
Input Power for 1 dB Compression (P1dB)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
Page 1 of 8
Sub-Harmonic Receiver
9.0 dB Conversion Gain
4.0 dB Noise Figure
12.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
70 mA
+0.3 VDC
0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dB
dBm
VDC
VDC
mA
Min.
34.0
33.0
15.5
DC
-
3.0/3.0
+10.0
10.0/6.0
-
-
-
-
-1.0
-
Typ.
-
-
-
-
18.0
9.0/9.0
+12.0
14.0/12.0
4.0
45.0
-13.0
+3.0
-0.5
30
Max.
40.0
40.0
21.5
3.0
-
-
+14.0
-
-
-
-
+5.5
0.0
60
(1) Measured using constant current.
(2) Min/Max limits over 33.0-39.5 GHz
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
3
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
3
2
2
May 2005 - Rev 13-May-05
R1001
相關(guān)PDF資料
PDF描述
XR1002-BD 17.65-33.65 GHz GaAs MMIC Receiver
XR1002-QB 18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm
XR1002-QB-0N00 18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm
XR1002-QB-0N0T 18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm
XR1002-QB-EV1 18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm
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