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參數(shù)資料
| 型號： | XR1001 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 33.0-40.0 GHz GaAs MMIC Receiver |
| 中文描述： | RF/MICROWAVE DOWN CONVERTER |
| 封裝： | DIE-6 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 1381K |
| 代理商： | XR1001 |
App Note [1] Biasing
- As shown in the bonding diagram, this device is operated with both stages in parallel,
and can be biased for low noise performance or high power performance. Low noise bias is nominally
Vd=3V, Id=30mA and is the recommended bias condition. Power bias may be as high as Vd=5.5V, Id=60mA.
It is also recommended to use active biasing to keep the currents constant as the RF power and temperature
vary; this gives the most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with
a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do
this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure
to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain
supply.
App Note [2] Bias Arrangement
- Each DC pad (Vd and Vg) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also
recommended.
Note:
RF and IF ports are AC coupled (DC blocks on chip), LO port is DC coupled (no DC block on chip.)
Page 5 of 8
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
84 deg Celsius
104 deg Celsius
124 deg Celsius
FITs
1.31E-03
2.09E-02
2.53E-01
MTTF Hours
7.63E+11
4.79E+10
3.95E+09
Rth
-
318.0
°
C/W
-
Bias Conditions:
Vd=3.0V, Id=30 mA
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
159 deg Celsius
179 deg Celsius
199 deg Celsius
FITs
7.18E+00
4.79E+01
2.72E+02
MTTF Hours
1.39E+08
2.09E+07
3.67E+06
Rth
-
314.8
°
C/W
-
Bias Conditions:
Vd=5.5V, Id=60 mA
R1001
33.0-40.0 GHz GaAs MMIC
Receiver
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2005 - Rev 13-May-05
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| XR1002-BD | 17.65-33.65 GHz GaAs MMIC Receiver |
| XR1002-QB | 18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm |
| XR1002-QB-0N00 | 18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm |
| XR1002-QB-0N0T | 18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm |
| XR1002-QB-EV1 | 18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| XR-100-1-278-405 | 制造商:Dzus Fastener Europe 功能描述:PAWL LATCH DP 109-S |
| XR-100-1-278-449 | 制造商:Dzus Fastener Europe 功能描述:PINLATCH |
| XR-100-1-278-455 | 制造商:Dzus Fastener Europe 功能描述:DZUS STANDARD LINE |
| XR1001-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:33.0-40.0 GHz GaAs MMIC Receiver |
| XR1001-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:33.0-40.0 GHz GaAs MMIC Receiver |
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