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參數(shù)資料
| 型號(hào)： | XRT75R03DIV-F |
| 廠商： | Exar Corporation |
| 文件頁(yè)數(shù)： | 131/135頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC LIU E3/DS3/STS-1 3CH 128LQFP |
| 標(biāo)準(zhǔn)包裝： | 72 |
| 類型： | 線路接口裝置（LIU） |
| 驅(qū)動(dòng)器/接收器數(shù)： | 3/3 |
| 規(guī)程： | DS3，E3，STS-1 |
| 電源電壓： | 3.135 V ~ 3.465 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 128-LQFP |
| 供應(yīng)商設(shè)備封裝： | 128-LQFP（14x20） |
| 包裝： | 托盤(pán) |
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XRT75R03D
91
REV. 1.0.4
THREE CHANNEL E3/DS3/STS-1 LINE
As mentioned above a DS3 or E3 signal will be asynchronously mapped into a SONET or SDH signal and then
transported over the SONET or SDH network. At the remote PTE this DS3 or E3 signal will be extracted (or
de-mapped) from this SONET or SDH signal, where it will then be routed to DS3 or E3 terminal equipment for
further processing.
In order to insure that this "de-mapped" DS3 or E3 signal can be routed to any industry-standard DS3 or E3
terminal equipment, without any complications or adverse effect on the network, the Telcordia and ITU-T
standard committees have specified some limits on both the Intrinsic Jitter and Wander that may exist within
these DS3 or E3 signals as they are de-mapped from SONET/SDH. As a consequence, all PTEs that maps
and de-mapped DS3/E3 signals into/from SONET/SDH must be designed such that the DS3 or E3 data that is
de-mapped from SONET/SDH by these PTEs must meet these Intrinsic Jitter and Wander requirements.
As mentioned above, the XRT75R03D can assist the System Designer (of SONET/SDH PTE) by insuring that
their design will meet these Intrinsic Jitter and Wander requirements.
This section of the data sheet will present the following information to the user.
Some background information on Mapping DS3/E3 signals into SONET/SDH and de-mapping DS3/E3
signals from SONET/SDH.
A brief discussion on the causes of jitter and wander within a DS3 or E3 signal that mapped into a SONET/
SDH signal, and is transported across the SONET/SDH Network.
A brief review of these Intrinsic Jitter and Wander requirements in both SONET and SDH applications.
A brief review on the Intrinsic Jitter and Wander measurement results (of a de-mapped DS3 or E3 signal)
whenever the XRT75R03D device is used in a system design.
A detailed discussion on how to design with and configure the XRT75R03D device such that the end-system
will meet these Intrinsic Jitter and Wander requirements.
In a SONET system, the relevant specification requirements for Intrinsic Jitter and Wander (within a DS3 signal
that is mapped into and then de-mapped from SONET) are listed below.
Telcordia GR-253-CORE Category I Intrinsic Jitter Requirements for DS3 Applications (Section 5.6), and
FIGURE 31. A SIMPLE ILLUSTRATION OF A DS3 SIGNAL BEING MAPPED INTO AND TRANSPORTED OVER THE SONET
NETWORK
PTE
SONET
Network
DS3 Data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XRT75R03IV-F | IC LIU E3/DS3/STS-1 3CH 128LQFP |
| XRT75R06DIB-F | IC LIU E3/DS3/STS-1 6CH 217BGA |
| XRT75R06IB-F | IC LIU E3/DS3/STS-1 6CH 217BGA |
| XRT75R12DIB-L | IC LIU E3/DS3/STS-1 12CH 420TBGA |
| XRT75R12IB-L | IC LIU E3/DS3/STS-1 12CH 420TBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XRT75R03DIVTR | 功能描述:時(shí)鐘合成器/抖動(dòng)清除器 3CHNNEL E3/DS3/STS 1 JITTER ATTENUATOR RoHS:否 制造商:Skyworks Solutions, Inc. 輸出端數(shù)量: 輸出電平: 最大輸出頻率: 輸入電平: 最大輸入頻率:6.1 GHz 電源電壓-最大:3.3 V 電源電壓-最小:2.7 V 封裝 / 箱體:TSSOP-28 封裝:Reel |
| XRT75R03DIVTR-F | 功能描述:接口 - 專用 RoHS:否 制造商:Texas Instruments 產(chǎn)品類型:1080p60 Image Sensor Receiver 工作電源電壓:1.8 V 電源電流:89 mA 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:BGA-59 |
| XRT75R03ES | 功能描述:時(shí)鐘合成器/抖動(dòng)清除器 3CH T3/E3/STS1LIU+JA 3.3V W/REDUNDANCY RoHS:否 制造商:Skyworks Solutions, Inc. 輸出端數(shù)量: 輸出電平: 最大輸出頻率: 輸入電平: 最大輸入頻率:6.1 GHz 電源電壓-最大:3.3 V 電源電壓-最小:2.7 V 封裝 / 箱體:TSSOP-28 封裝:Reel |
| XRT75R03IV | 功能描述:外圍驅(qū)動(dòng)器與原件 - PCI 3CHNNEL E3/DS3/STS 1 JITTER ATTENUATOR RoHS:否 制造商:PLX Technology 工作電源電壓: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FCBGA-1156 封裝:Tray |
| XRT75R03IV-F | 功能描述:外圍驅(qū)動(dòng)器與原件 - PCI 3-Ch E3/DS3/STS-1 RoHS:否 制造商:PLX Technology 工作電源電壓: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FCBGA-1156 封裝:Tray |
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