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參數(shù)資料
| 型號(hào)： | XTR108EA |
| 英文描述： | 4-20mA, TWO-WIRE TRANSMITTER Smart Programmable with Signal Conditioning |
| 中文描述： | 的4 - 20mA，兩線制變送器可編程智能與信號(hào)調(diào)理 |
| 文件頁數(shù)： | 12/27頁 |
| 文件大?。?/td> | 497K |
| 代理商： | XTR108EA |
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XTR108
SBOS187B
12
www.ti.com
means that one LSB of the coarse DAC is equal to 16 fine
LSBs, and the full-scale range of the fine DAC is equal to 16
coarse LSBs. This effectively produces 12-bit adjustment
resolution. This allows the user to set pre-calculated values
before the calibration, using the coarse DAC only and adjust
the reference current output level with the fine DAC during
the calibration process.
LINEARIZATION CIRCUIT AND R
LIN
RESISTOR
The XTR108 incorporates circuitry for correcting a second-
order sensor nonlinearity. A current proportional to the
voltage at the input of the PGA is added to the sensor
excitation. The R
LIN
resistor is used to convert this voltage
into current. By appropriately scaling this current using the
linearization DAC, parabolic sensor nonlinearity can be
improved by up to a 40:1 ratio, as shown in Figure 3. The
linearization coefficient (ratio of the reference current change
to the input voltage) is expressed in
μ
A/mV as follows:
G
I
V
N
R
LIN
REF
IN
LIN
=
14
16
where N
14
is the decimal value from register 14.
The recommended value of the resistor is 15.8k
, for use
with 100
RTD sensors. This value produces a full-scale
linearization coefficient of about 1mA/V. Please see the
section below on using the XTR108 with an RTD tempera-
ture sensor. If the sensor excitation is scaled down by
increasing the value of R
SET
, the value of R
LIN
should be
scaled proportionally.
SUB-REGULATOR WITH EXTERNAL MOSFET
The XTR108 is manufactured using a low-voltage CMOS
process with maximum supply voltage limited to 5.5V. For
applications in a 4-20mA current loop, a special sub-regulator
circuit is incorporated in the device that requires an external
n-channel depletion-mode MOS transistor and three capaci-
tors, see Figure 2.
A number of third-party suppliers make n-channel deple-
tion-mode MOSFETs. A list of devices tested by Texas
Instruments, Inc. is shown in Table IV with the capacitor
values recommended for those devices.
The capacitors C
LOOP
(0.01
μ
F), C
REG
(2.2
μ
F), and C
GATE
are required for the regulator loop stability and supply
bypass. They should be placed in close proximity to the
XTR108 on the PCB. An additional 1
μ
F capacitor may be
used to bypass the supply of an EEPROM chip.
If a MOSFET other than those listed in Table IV is used, the
value of C
GATE
should be adjusted such that there is no
overshoot of V
S
during power-up and supply glitches. Any
V
S
overshoot above 7.5V may damage the XTR108 or
deteriorate its performance.
LOOP VOLTAGE
The XTR108 transmitter minimum loop voltage can some-
what be effected by the choice of the external MOSFET. The
devices are tested to 7.5V compliance with Supertex DN2540;
choosing other MOSFETs can change this value slightly.
The maximum loop voltage is limited by the power dissipa-
tion on the MOSFET as well as its breakdown voltage.
Possible ambient temperatures and the power dissipation
should be taken into account when selecting the MOSFET
package. The external MOSFET can dissipate a consider-
able amount of power when running at high loop supply. For
example, if V
LOOP
= 24V and I
OUT
= 20mA, the DC power
dissipated by the MOSFET is:
P
MOSFET
= I
OUT
(V
LOOP
– V
S
) = 380m
For a SOT-89 package soldered on an FR5 board, this will
cause a 30
°
C rise in the temperature. The power dissipation
gets significantly higher when the circuit is driven into an
over-scale condition. Therefore, special attention should be
paid to removing the heat from the MOSFET, especially
with small-footprint packages such as SOT-89 and TO-92.
Please follow manufacturer’s recommendations about the
package thermal characteristics and board mounting.
UNCOMMITTED OP AMP
For added flexibility in various applications, the XTR108
has an on-chip uncommitted operational amplifier. The op
amp has rail-to-rail output range. The input range extends to
I
RET
potential.
FIGURE 3. Pt100 Nonlinearity Correction Using the XTR108.
–
200
°
C
Process Temperature (
°
C)
+850
°
C
5
4
3
2
1
0
–
1
Uncorrected
RTD Nonlinearity
Corrected
Nonlinearity
N
MANUFACTURER
MOSFET MODEL
C
GATE
VALUE
220pF
1000pF
Supertex
DN2535, DN2540
DN3535, DN3525
Siliconix
ND2012, ND2020
220pF
Infineon
BSP149
1000pF
TABLE IV. Recommended Gate Capacitor Values For Se-
lected MOSFETs.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XTR110L | LCC Precision Voltage-to-Current Converter/Transmitter |
| XTR501 | XTR501 - HIGH CURRENT BRIDGE DRIVER and 4-20mA Transmitter |
| XTTEK100Q56 | PSU 100W 4 O/P U FRAME |
| XTTEK100Q86 | PSU 100W 4 O/P U FRAME |
| XTTEK100S01 | PSU 5V 20A L FRAME |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XTR108EA/2K5 | 功能描述:接口 - 專用 4-20mA 2Wire Trsmtr ’Smart’ Prog RoHS:否 制造商:Texas Instruments 產(chǎn)品類型:1080p60 Image Sensor Receiver 工作電源電壓:1.8 V 電源電流:89 mA 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:BGA-59 |
| XTR108EA/2K5G4 | 功能描述:接口 - 專用 4-20mA 2Wire Trsmtr ’Smart’ Prog RoHS:否 制造商:Texas Instruments 產(chǎn)品類型:1080p60 Image Sensor Receiver 工作電源電壓:1.8 V 電源電流:89 mA 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:BGA-59 |
| XTR108EA-2K5 | 制造商:BB 制造商全稱:BB 功能描述:4-20mA, TWO-WIRE TRANSMITTER a??Smarta?? Programmable with Signal Conditioning |
| XTR108EA-2K5G4 | 制造商:BB 制造商全稱:BB 功能描述:4-20mA, TWO-WIRE TRANSMITTER a??Smarta?? Programmable with Signal Conditioning |
| XTR108EAG4 | 功能描述:接口 - 專用 4-20mA 2Wire Trsmtr ’Smart’ Prog RoHS:否 制造商:Texas Instruments 產(chǎn)品類型:1080p60 Image Sensor Receiver 工作電源電壓:1.8 V 電源電流:89 mA 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:BGA-59 |
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