參數(shù)資料
型號: ZXM62P03G
文件頁數(shù): 2/8頁
文件大?。?/td> 286K
代理商: ZXM62P03G
ZXM62P03G
2
ISSUE 2 - DECEMBER 2002
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS S
V
GS
I
D
-30
V
Gate-Source Voltage
20
V
Continuous Drain Current (V
GS
= -10V; T
A
=25°C)(b)
(V
GS
= -10V; T
A
=70°C)(b)
(V
GS
= -10V; T
A
=25°C)(a)
-4.0
-3.2
-2.9
A
Pulsed Drain Current (c)
I
DM
I
S
I
S M
P
D
-13
A
Continuous Source Current (Body Diode) (b)
2.4
A
Pulsed Source Current (Body Diode)(c)
-13
A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
2.0
16
W
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
3.9
31
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
V ALUE
UNIT
J unction to Ambient (a)
R
θ
J A
62.5
°C/W
J unction to Ambient (b)
R
θ
J A
32.2
°C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
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