參數(shù)資料
型號(hào)： ZXMN10B08E6
廠商： Zetex Semiconductor
英文描述： 100V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 100V的N溝道增強(qiáng)型MOS管
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 252K
代理商： ZXMN10B08E6
ZXMN10B08E6
S E M IC O N D U C T O R S
PROVISIONAL ISSUE B - MAY 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
θ
JA
113
°C/W
Junction to Ambient (b)
R
θ
JA
73
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
VGS
ID
100
V
Gate Source Voltage
20
V
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
1.9
1.5
1.6
A
Pulsed Drain Current (c)
IDM
IS
ISM
PD
9
A
Continuous Source Current (Body Diode) (b)
2.5
A
Pulsed Source Current (Body Diode) (c)
9
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
1.1
8.8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS.
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMN10B08E6_05 制造商:ZETEX 制造商全稱(chēng):ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN10B08E6TA 功能描述:MOSFET 100V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMN10B08E6TC 功能描述:MOSFET 100V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMN15A27K 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:MOSFETs optimised for Voice over Internet Protocol (VoIP)
ZXMN15A27KTC 功能描述:MOSFET ENHANCE MODE MOSFET 150V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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