參數(shù)資料
型號： ZXMN10B08E6
廠商： Zetex Semiconductor
英文描述： 100V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 100V的N溝道增強型MOS管
文件頁數(shù)： 4/7頁
文件大?。?/td> 252K
代理商： ZXMN10B08E6
ZXMN10B08E6
S E M IC O N D U C T O R S
PROVISIONAL ISSUE B - MAY 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
100
V
ID=250 A, VGS=0V
VDS=100V, VGS=0V
VGS=
20V, VDS=0V
ID=250 A, VDS= VGS
VGS=10V, ID=1.6A
VGS=4.5V, ID=1.4A
VGS=4.3V, ID=1.1A
VDS=15V,ID=1.6A
Zero Gate Voltage Drain Current
0.5
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
1.0
3.0
V
Static Drain-Source On-State Resistance
(1)
0.230
0.300
0.500
Forward Transconductance (1)(3)
gfs
4.8
S
DYNAMIC
(3)
Input Capacitance
Ciss
Coss
Crss
497
pF
VDS=50 V, VGS=0V,
f=1MHz
Output Capacitance
29
pF
Reverse Transfer Capacitance
18
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
tr
td(off)
tf
Qg
2.9
ns
VDD=50V, ID=1.0A
RG
6.0 , VGS=10V
Rise Time
2.1
ns
Turn-Off Delay Time
12.1
ns
Fall Time
5.0
ns
Gate Charge
5.0
nC
VDS=50V,VGS=5V,
I
D
=1.6A
Total Gate Charge
Qg
Qgs
Qgd
9.2
nC
VDS=50V,VGS=10V,
I
D
=1.6A
Gate-Source Charge
1.7
nC
Gate-Drain Charge
2.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.85
0.95
V
TJ=25°C, IS=2.0A,
VGS=0V
TJ=25°C, IF=1.7A,
di/dt= 100A/ s
Reverse Recovery Time (3)
trr
Qrr
32.0
ns
Reverse Recovery Charge (3)
40.0
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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相關代理商/技術參數(shù)
參數(shù)描述
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