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參數(shù)資料
| 型號： | 200GT120DN2 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 302K |
| 代理商： | 200GT120DN2 |
2
Nov-24-1997
BSM 200 GT 120 DN2
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 8 mA
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 200 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 200 A,
T
j
= 125 °C
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 °C
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 125 °C
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
V
GE(th)
4.5
5.5
6.5
V
V
CE(sat)
-
-
3.1
2.5
3.7
3
I
CES
-
-
12
3
-
4
mA
I
GES
-
-
200
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 200 A
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
g
fs
108
-
-
S
C
iss
-
18
-
nF
C
oss
-
2.5
-
C
rss
-
1
-
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