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參數(shù)資料
| 型號： | 200GT120DN2 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 302K |
| 代理商： | 200GT120DN2 |
7
Nov-24-1997
BSM 200 GT 120 DN2
Typ. switching time
I = f (I
C
) ,
inductive load , T
j
= 125°C
par.:
V
CE
= 600 V,
V
GE
= ± 15 V,
R
G
= 4.7
0
100
200
300
A
500
I
C
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
t = f (R
G
) ,
inductive load ,
T
j
= 125°C
par.:
V
CE
= 600 V,
V
GE
= ± 15 V,
I
C
= 200 A
0
10
20
30
40
60
R
G
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (I
C
) ,
inductive load ,
T
j
= 125°C
par.:
V
CE
= 600 V,
V
GE
= ± 15 V,
R
G
= 4.7
0
100
200
300
A
500
I
C
0
10
20
30
40
50
60
70
80
mWs
100
E
Eon
Eoff
Typ. switching losses
E = f (R
G
) ,
inductive load
,
T
j
= 125°C
par.:
V
CE
= 600V,
V
GE
= ± 15 V,
I
C
= 200 A
0
10
20
30
40
60
R
G
0
10
20
30
40
50
60
70
80
mWs
100
E
Eon
Eoff
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