參數(shù)資料
型號: 200GT120DN2
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數(shù): 3/9頁
文件大?。?/td> 302K
代理商: 200GT120DN2
3
Nov-24-1997
BSM 200 GT 120 DN2
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 200 A
R
Gon
= 4.7
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 200 A
R
Gon
= 4.7
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 200 A
R
Goff
= 4.7
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 200 A
R
Goff
= 4.7
t
d(on)
-
180
350
ns
t
r
-
80
160
t
d(off)
-
750
950
t
f
-
70
100
Free-Wheel Diode
Diode forward voltage
I
F
= 200 A,
V
GE
= 0 V,
T
j
= 25 °C
I
F
= 200 A,
V
GE
= 0 V,
T
j
= 125 °C
Reverse recovery time
I
F
= 200 A,
V
R
= -600 V,
V
GE
= 0 V
d
i
F
/
dt
= -2000 A/μs,
T
j
= 125 °C
Reverse recovery charge
I
F
= 200 A,
V
R
= -600 V,
V
GE
= 0 V
d
i
F
/
dt
= -2000 A/μs
T
j
= 25 °C
T
j
= 125 °C
V
F
-
-
1.8
2.3
-
2.8
V
t
rr
-
400
-
ns
Q
rr
-
-
36
12
-
-
μC
相關(guān)PDF資料
PDF描述
200H-ALP Optoelectronic
200H-GLP Optoelectronic
200H-RLP Optoelectronic
200HF(R)SERIES STANDARD RECOVERY DIODES 200 A
200HF(R) STANDARD RECOVERY DIODES Stud Version
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