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參數(shù)資料
| 型號： | 2097152 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 32-BIT DYNAMIC RAM MODULE |
| 中文描述： | 32位動態(tài)RAM模塊 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 140K |
| 代理商： | 2097152 |
TM124BBK32F, TM124BBK32U 1048576 BY 32-BIT DYNAMIC RAMMODULE
TM248CBK32F, TM248CBK32U 2097152 BY 32-BIT DYNAMIC RAMMODULE
SMMS649A – DECEMBER 1994 – REVISED JUNE 1995
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
CC
(see Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage range on any pin (see Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Short-circuit output current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power dissipation:
TM124BBK32F, TM124BBK32U
TM248CBK32F, TM248CBK32U
Operating free-air temperature range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to VSS.
– 1 V to 7 V
– 1 V to 7 V
50 mA
2 W
4 W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0
°
C to 70
°
C
– 55
°
C to 125
°
C
recommended operating conditions
MIN
NOM
MAX
UNIT
VCC
VIH
VIL
TA
NOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used for logic-voltage levels only.
Supply voltage
4.5
5
5.5
V
High-level input voltage
2.4
6.5
V
Low-level input voltage (see Note 2)
– 1
0.8
V
°
C
Operating free-air temperature
0
70
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
’124BBK32F-60
MIN
’124BBK32F-70
MIN
’124BBK32F-80
MIN
UNIT
MAX
MAX
MAX
VOH
VOL
High-level output voltage
IOH = – 5 mA
IOL = 4.2 mA
VCC = 5.5 V,
All other pins = 0 V to VCC
VCC = 5.5 V,
VO = 0 V to VCC,
CAS high
2.4
2.4
2.4
V
Low-level output voltage
0.4
0.4
0.4
V
II
Input current (leakage)
VI = 0 V to 6.5 V,
±
10
±
10
±
10
μ
A
IO
Output current (leakage)
±
10
±
10
±
10
μ
A
ICC1
Read- or write-cycle
current
VCC = 5.5 V,
Minimum cycle
180
160
140
mA
ICC2
Standby current
VIH = 2.4 V (TTL),
After 1 memory cycle,
RAS and CAS high
4
4
4
mA
VIH = VCC – 0.2 V (CMOS),
After 1 memory cycle,
RAS and CAS high
2
2
2
mA
ICC3
Average refresh current
(RAS only or CBR)
VCC = 5.5 V,
RAS cycling,
CAS high (RAS only);
RAS low after CAS low (CBR)
VCC = 5.5 V,
RAS low,
Minimum cycle,
180
160
140
mA
ICC4
Average page current
tPC = MIN,
CAS cycling
180
160
140
mA
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