參數(shù)資料
型號： 2097152
廠商： Texas Instruments, Inc.
英文描述： 32-BIT DYNAMIC RAM MODULE
中文描述： 32位動態(tài)RAM模塊
文件頁數(shù)： 5/9頁
文件大?。?/td> 140K
代理商： 2097152
TM124BBK32F, TM124BBK32U 1048576 BY 32-BIT DYNAMIC RAMMODULE
TM248CBK32F, TM248CBK32U 2097152 BY 32-BIT DYNAMIC RAMMODULE
SMMS649A – DECEMBER 1994 – REVISED JUNE 1995
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
’248CBK32F-60
MIN
’248CBK32F-70
MIN
’248CBK32F-80
MIN
UNIT
MAX
MAX
MAX
VOH
High-level output
voltage
IOH = – 5 mA
2.4
2.4
2.4
V
VOL
Low-level output
voltage
IOL = 4.2 mA
0.4
0.4
0.4
V
II
Input current (leak-
age)
VCC = 5.5 V,
All other pins = 0 V to VCC
VCC = 5.5 V,
VO = 0 V to VCC, CAS high
VI = 0 V to 6.5 V,
±
10
±
10
±
10
μ
A
IO
Output current
(leakage)
±
20
±
20
±
20
μ
A
ICC1
Read- or write-cycle
current (see Note 3)
VCC = 5.5 V,
Minimum cycle
184
164
144
mA
ICC2
Standby current
VIH = 2.4 V (TTL),
After 1 memory cycle,
RAS and CAS high
8
8
8
mA
VIH = VCC – 0.2 V (CMOS),
After 1 memory cycle,
RAS and CAS high
4
4
4
mA
ICC3
Average refresh
current (RAS only or
CBR) (see Note 3)
VCC = 5.5 V,
RAS cycling,
CAS high (RAS only);
RAS low after CAS low (CBR)
VCC = 5.5 V,
RAS low,
Minimum cycle,
360
320
280
mA
ICC4
Average page current
(see Note 4)
For test conditions shown as MIN/MAX, use the appropriate value specified under recommended operating conditions.
NOTES:
3. Measured with a maximum of one address change while RAS = VIL
4. Measured with a maximum of one address change while CAS = VIH
tPC = MIN,
CAS cycling
184
164
144
mA
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 5)
PARAMETER
’124BBK32F
’248CBK32F
UNIT
MIN
MAX
MIN
MAX
Ci(A)
Ci(R)
Ci(C)
Ci(W)
Co(DQ)
NOTE 5: VCC = 5 V
±
0.5 V, and the bias on pins under test is 0 V.
Input capacitance, A0–A9
10
20
pF
Input capacitance, RAS inputs
7
7
pF
Input capacitance, CAS inputs
7
14
pF
Input capacitance, W
14
28
pF
Output capacitance on DQ0–DQ31
7
14
pF
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