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參數(shù)資料
| 型號： | 2097152 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 32-BIT DYNAMIC RAM MODULE |
| 中文描述： | 32位動態(tài)RAM模塊 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 140K |
| 代理商： | 2097152 |
TM124BBK32F, TM124BBK32U 1048576 BY 32-BIT DYNAMIC RAMMODULE
TM248CBK32F, TM248CBK32U 2097152 BY 32-BIT DYNAMIC RAMMODULE
SMMS649A – DECEMBER 1994 – REVISED JUNE 1995
7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
timing requirements over recommended ranges of supply voltage and operating free-air
temperature (continued)
’124BBK32F-60
’248CBK32F-60
MIN
’124BBK32F-70
’248CBK32F-70
MIN
’124BBK32F-80
’248CBK32F-80
MIN
UNIT
MAX
MAX
MAX
tWCH
tWRH
tCHR
tCRP
tCSH
tCSR
tRAD
tRAL
tCAL
tRCD
tRPC
tRSH
tREF
tT
NOTE 10: The maximum value is specified only to assure access time.
Hold time, W low after CAS low
10
15
15
ns
Hold time, W high after RAS low (CBR refresh only)
10
10
10
ns
Delay time, RAS low to CAS high (CBR refresh only)
10
10
10
ns
Delay time, CAS high to RAS low
5
5
5
ns
Delay time, RAS low to CAS high
60
70
80
ns
Delay time, CAS low to RAS low (CBR refresh only)
5
5
5
ns
Delay time, RAS low to column address (see Note 10)
15
30
15
35
15
40
ns
Delay time, column address to RAS high
30
35
40
ns
Delay time, column address to CAS high
30
35
40
ns
Delay time, RAS low to CAS low (see Note 10)
20
45
20
52
20
60
ns
Delay time, RAS high to CAS low (CBR only)
0
0
0
ns
Delay time, CAS low to RAS high
15
18
20
ns
Refresh time interval
16
16
16
ms
Transition time
3
30
3
30
3
30
ns
device symbolization (TM124BBK32F illustrated)
TM124BBK32F
-SS
YYMMT
YY =
MM =
T =
-SS =
Year Code
Month Code
Assembly Site Code
Speed Code
NOTE: Location of symbolization may vary.
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