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參數(shù)資料
| 型號(hào)： | 21531G |
| 英文描述： | Programmable 8 bit Silicon Delay Line |
| 中文描述： | AMD的快閃記憶體快速參考指南- 2003年2月版 |
| 文件頁數(shù)： | 17/17頁 |
| 文件大?。?/td> | 606K |
| 代理商： | 21531G |
16
Flash Memory in Known Good Die (KGD) form
1,2
Notes:
1.
2.
3.
For additional product information, see the device listings in the tables for packaged devices.
Contact an AMD representative for minimum order quantity in Gel-Pak wafer tray packing (ordering designator is DW).
Part number designator not required for uniform sector.
KGD Ordering Part Number Designators
Density
Part Number
Sector
Access
Times (ns)
Waffle
Pack Qty.
(DP)
Gel-Pak
Qty.
(DG)
Surftape
Qty.
(DT)
Temp.
Range
Pad
Count
Voltage
Supply
(V)
Die SIze
(mm)
Organization/
Additional Comments
2.5 V
16 Mbit
Am29BDD160G
T, B
64C, 65A
140
66
1600
I, E, H
76
2.5–2.7
4.54 x 7.50
1 M x 16/512 K x 32. Simultaneous
read/write and Burst mode.
3 V
8 Mbit
Am29BL802C
B
80R
125
336
1600
I, E, H
51
3.0–3.6
6.85 x 5.44
512 K x 16. Burst mode.
16 Mbit
Am29BL162C
B
80R
80
252
1600
I, E, H
52
3.0–3.6
6.85 x 7.72
1 M x 16. Burst mode.
2 Mbit
Am29LV200B
T, B
60R
245
not avail.
2500
C, I
43
3.0–3.6
3.55 x 3.51
256 K x 8, 128 K x 16.
70, 90 120
2.7–3.6
4 Mbit
Am29LV400B
T, B
60R
210
not avail.
2500
C, I
43
3.0–3.6
4.70 x 3.56
512 K x 8, 256 K x 16.
70
C, I
2.7–3.6
80, 90, 120
C, I, E
8 Mbit
Am29LV800B
T, B
80, 90, 120
140
462
2500
C, I
44
2.7–3.6
3.56 x 7.09
1 M x 8, 512 K x 16.
5 V
1 Mbit
Am29F010B
Uniform
3
90, 120
400
648
2500
C, I, E
30
4.5–5.5
2.28 x 4.04
128 K x 8.
2 Mbit
Am29F200B
T, B
75 (70 ns)
245
486
2500
C, I, E
42
4.75–5.25
3.43 x 3.81
256 K x 8, 128 K x 16.
90, 120
4.5–5.5
4 Mbit
Am29F400B
T, B
75 (70 ns)
140
594
2500
C, I, E
43
4.75–5.25
3.42 x 5.02
512 K x 8, 256 K x 16.
90, 120
4.5–5.5
8 Mbit
Am29F800B
T, B
90, 120
140
396
1600
C, I, E
44
4.5–5.5
3.43 x 7.42
1 M x 8, 512 K x 16.
16 Mbit
Am29F016D
Uniform
3
120
100
294
1600
C, I
38
4.5–5.5
4.74 x 5.30
2 M x 8.
Am29LV
800
B
T
90
DT
C
1
DIE REVISION
This number refers to the specific AMD manufacturing process and product technology. It is entered in the revision field of AMD standard
product nomenclature.
TEMPERATURE RANGE
C
=
I
=
Commercial (0
°
C to +70
°
C)
Industrial (–40
°
C to +85
°
C)
E
H
=
=
Extended (–55
°
C to +125
°
C)
Super Extended (–55
C to +145
°
C)
PACKAGE TYPE
DP
=
DG =
WJ
=
Waffle Pack (5-tray stack)
Gel-Pak Die Tray (6-tray stack)
Wafer Jar (contact AMD for availability)
DT
DW =
=
Surftape (7” Tape and Reel)
Gel-Pak Wafer Tray (contact AMD for minimum order quantity)
SPEED OPTION (t
ACC
), VOLTAGE REGULATION
2.5 Volt Devices
***
=
Digits indicate initial burst or asynchronous speed in ns; A = 40 MHz clock, C = 56 MHz clock. V
CC
= 2.5–2.7 V
3 Volt Devices
**(*)
=
Digits indicate speed in ns; device is full voltage range, V
= 2.7–3.6 V
**(*)R
=
Digits indicate speed in ns, “R” indicates regulated voltage range V
CC
= 3.0–3.6 V
5 Volt Devices
*(*)0
=
Speed option ends in “0”: Indicates speed in ns. V
CC
= 5.0 V ±10% (4.5–-5.5 V)
*5
=
Speed option ends in “5”: Check table listing and/or data sheet for actual speed and voltage range.
SECTOR ARCHITECTURE AND SECTOR WRITE PROTECTION
T
=
Top boot sector
B
=
Bottom boot sector
PROCESS TECHNOLOGY
B
=
0.32 μm technology
C
=
0.32 μm thin-film technology
D
G
=
=
0.23 μm thin-film technology
0.17 μm thin-film technology
DENSITY BUS WIDTH, AND SECTOR ORGANIZATION
***(*) =
Density is as noted in table. Digits broadly give an indication of device density.
Bus width and organization vary by family.
FLASH MEMORY DEVICE FAMILY
Am29LV
=
Am29BL
=
3 Volt-only
3 Volt-only, Burst Mode
Am29F
Am29BDD
=
=
5 Volt-only
2.5 Volt-only, Simultaneous Read/Write, Burst Mode
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