參數(shù)資料
型號: 24FC65
廠商: Microchip Technology Inc.
英文描述: 64K 5.0V 1MHz CMOS Smart Serial EEPROMs(4.5~5.5V,64K位,10M次擦寫周期,IIC智能串行EEPROM)
中文描述: 64K的5.0V的CMOS 1MHz的智能(4.5?5.5V的,64K的位,1000萬次擦寫周期,國際進口智能串行EEPROM的串行EEPROM)
文件頁數(shù): 3/16頁
文件大?。?/td> 237K
代理商: 24FC65
1997 Microchip Technology Inc.
DS21125C-page 3
24FC65
TABLE 1-3:
AC CHARACTERISTICS
FIGURE 1-2:
BUS TIMING DATA
T
F
Parameter
Symbol
1 MHz Bus
Units
Remarks
Min
0
500
500
250
Max
1000
300
100
Clock frequency
Clock high time
Clock low time
SDA and SCL rise time
SDA and SCL fall time
START hold time
F
CLK
kHz
ns
ns
ns
ns
ns
THIGH
T
LOW
T
T
T
HD
R
(Note 1)
(Note 1)
After this period the first clock pulse is
generated
Only relevant for repeated START
F
:
STA
START setup time
Data input hold time
Data input setup time
STOP setup time
Output valid from clock
Bus free time
T
T
T
T
SU
:
:
:
:
STA
250
0
100
250
500
350
ns
ns
ns
ns
ns
ns
HD
DAT
SU
DAT
SU
T
T
STO
AA
(Note 2)
Time the bus must be free before a
new transmission can start
ms/page (Note 3)
BUF
Write cycle time
Endurance
T
WR
5
High Endurance Block
Rest of Array
Note 1: Not 100 percent tested.
2: As a transmitter, the device must provide an internal minimum delay time to bridge the undefined region (min-
imum 100 ns) of the falling edge of SCL to avoid unintended generation of START or STOPs.
3: The times shown are for a single page of 8 bytes. Multiply by the number of pages loaded into the write cache
for total time.
4: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific appli-
cation, please consult the Total Endurance Model which can be obtained on our BBS or website.
10M
1M
cycles
25
°
C, Vcc = 5.0V, Block Mode (Note 4)
SCL
SDA
IN
SDA
OUT
T
SU
:
STA
T
SP
T
AA
T
LOW
T
HIGH
T
HD
:
STA
T
HD
:
DAT
T
SU
:
DAT
T
SU
:
STO
T
BUF
T
AA
T
R
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